Unveiling and Overcoming Instabilities in Perovskite Solar Cells Induced by Atomic-Layer-Deposition Tin Oxide,Solar RRL

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Unveiling and Overcoming Instabilities in Perovskite Solar Cells Induced by Atomic-Layer-Deposition Tin Oxide
Solar RRL ( IF 6.0 ) Pub Date : 2024-03-22 , DOI: 10.1002/solr.202301076
Zhuo Zheng _{1,

2} , Zexu Xue ₁ , Kai Zhao ₁ , Yuanhang Yang ₁ , Xueliang Zhu ₁ , Hao Li ₁ , Siyang Cheng ₁ , Sheng Li _{1,

2} , Ning Yan ₁ , Zhiping Wang _{1,

2}

Affiliation

Atomic layer deposition of tin oxide (ALD–SnO_x) has emerged as a promising buffer/protection layer, often replacing bathocuproine (BCP) in applications such as semitransparent and tandem devices. However, the long-term stability and underlying degradation mechanisms of perovskite solar cells (PSC) incorporating ALD–SnO_x remain elusive. Herein, the long-term stability of PSCs featuring an ALD–SnO_x buffer layer is systematically investigated. Intriguingly, it is observed that cells with ALD–SnO_x exhibit heightened susceptibility to severe degradation, surpassing even the degradation levels observed with BCP under humid conditions. Through an extensive analysis employing X-ray photoelectron spectroscopy and X-ray diffraction, it is unveiled that ALD–SnO_x triggers a phase transition in the perovskite when exposed to moisture, transitioning from the black cubic phase to the yellow delta phase, despite the presence of a thin layer of fullerene between the SnO_x and the perovskite. Replacing ALD–SnO_x with ALD–AlO_x as a buffer layer emerges as a transformative strategy, effectively bolstering the humidity and thermal stability of the cells, without affecting device efficiency. The optimized ALD–AlO_x-buffered device exhibits a high efficiency of 24.61% and maintains 88% of its initial efficiency after maximum power point tracking under 1 sun illumination for 1350 h at 65 °C in ambient air when encapsulated.

中文翻译：

揭示并克服原子层沉积氧化锡引起的钙钛矿太阳能电池的不稳定性

氧化锡 (ALD–SnO _x ) 的原子层沉积已成为一种有前途的缓冲/保护层，通常在半透明和串联器件等应用中取代浴铜灵 (BCP)。然而，结合 ALD-SnO _x的钙钛矿太阳能电池（PSC）的长期稳定性和潜在的降解机制仍然难以捉摸。在此，系统地研究了具有 ALD-SnO _x缓冲层的 PSC 的长期稳定性。有趣的是，我们观察到含有 ALD-SnO _x的细胞对严重降解表现出更高的敏感性，甚至超过了在潮湿条件下用 BCP 观察到的降解水平。通过使用 X 射线光电子能谱和 X 射线衍射的广泛分析，发现 ALD-SnO _x暴露于水分时会触发钙钛矿中的相变，从黑色立方相转变为黄色 δ 相，尽管SnO _x和钙钛矿之间存在富勒烯薄层。用 ALD-AlO _x代替ALD- SnO _x作为缓冲层是一种变革策略，可以有效增强电池的湿度和热稳定性，而不影响器件效率。优化的 ALD-AlO _x缓冲器件表现出 24.61% 的高效率，并且在封装后在 1 个太阳光照下、在 65 °C 环境空气中进行 1350 小时的最大功率点跟踪后，仍保持其初始效率的 88%。

更新日期：2024-03-22

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