<br>增强铁电薄膜压电性的新途径：控制 Pb(Zr, Ti)O3 单畴超晶格结构中的非平凡极化态,ACS Applied Materials & Interfaces

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增强铁电薄膜压电性的新途径：控制 Pb(Zr, Ti)O3 单畴超晶格结构中的非平凡极化态
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2024-03-22 , DOI: 10.1021/acsami.3c18721
Jundong Song _{1,

2} , Youhei Ebihara ₁ , Petr Yudin ₃ , Osami Sakata _{4,

5} , Hitoshi Morioka ₆ , Takanori Kiguchi ₇ , Shinya Kondo ₈ , Xueyou Yuan ₁ , Soichiro Okamura ₂ , Masahito Yoshino ₁ , Takanori Nagasaki ₁ , Tomoaki Yamada _{1,

9,

10}

Affiliation

Department of Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.
Department of Applied Physics, Tokyo University of Science, 6-3-1 Niijuku, Katsushika-ku, Tokyo 125-8585, Japan.
Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, Praha 8 18221, Czech Republic.
Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan.
Synchrotron X-ray Group, Research Center for Advanced Measurement and Characterization, National Institute for Materials Science (NIMS), 1-1-1, Kouto, Sayo, Hyogo 679-5148, Japan.
Application Department, X-ray Division, Bruker Japan K.K., Yokohama 221-0022, Japan.
Magnesium Research Center, Kumamoto University, Chuo-ku, Kurokami, Kumamoto 860-8555, Japan.
Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan.
PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan.
MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama 226-8503, Japan.

本研究从理论上和实验上研究了Pb(Zr _0.4 Ti _0.6 )O ₃和Pb(Zr _0.6 Ti _0.4 )O ₃人造超晶格薄膜的极化态和压电性能。所发展的理论预测在具有均匀压缩应变的（111）外延单畴超晶格薄膜中，沿着[001]和[111]方向的非平凡极化。这种薄膜是通过脉冲激光沉积获得的。当层厚度减小至3 nm时， d ₃₃在100 kV/cm下变为128 ± 3.8 pm/V，在600 kV/cm下变为71.3 ± 2.83 pm/V，与(111)取向的Pb(Zr _0.4 )相当。 Ti _0.6 )O ₃或Pb(Zr _0.6 Ti _0.4 )O ₃块体明显超过典型的夹持薄膜。测量结果与理论分析一致，表明压电性的增强是由于非平凡极化的旋转造成的。此外，理论研究预测，对于具有均匀拉伸应变的超晶格薄膜的特定参数， d ₃₃甚至会超过300 pm/V，这对于微机电系统的应用具有广阔的前景。

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更新日期：2024-03-22

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