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Sulfate-Passivated CsPbI3 Perovskite Nanocrystals for Efficient Red Light-Emitting Diodes
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2024-03-20 , DOI: 10.1021/acsanm.3c05808
Hongrui Cheng 1, 2 , Wensong Wang 1, 2 , Haijiang Qiu 1, 2 , Fushan Li 1, 3 , Yuanhui Zheng 1, 2
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2024-03-20 , DOI: 10.1021/acsanm.3c05808
Hongrui Cheng 1, 2 , Wensong Wang 1, 2 , Haijiang Qiu 1, 2 , Fushan Li 1, 3 , Yuanhui Zheng 1, 2
Affiliation
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Due to their excellent optical performance, lead halide perovskite nanocrystals (PeNCs) have been widely used in optoelectronic devices. However, the presence of surface defects such as localized trap states severely hampers their practical application in optoelectronic fields. In this work, we have developed a simple method to reduce surface defects by introducing sulfuric acid after the nucleation of CsPbI3 PeNCs is complete. Sulfate ions effectively interact with the exposed metal lead ions on the surface of perovskite NCs, leading to surface passivation. This process represses nonradiative recombination and significantly enhances the luminescence efficiency of PeNCs. Moreover, the passivated CsPbI3 PeNCs with SO42– exhibit a lower overall energy-level structure compared to that of pristine CsPbI3 PeNCs, promoting improved electron injection. Benefiting from this highly effective passivation strategy, light-emitting diodes (LEDs) based on SO42–-passivated PeNCs exhibit an optimal external quantum yield of 9.94% and luminance of 2182 cd m–2, surpassing the performance of LEDs made from pristine PeNCs.
中文翻译：
用于高效红色发光二极管的硫酸盐钝化 CsPbI3 钙钛矿纳米晶体
由于其优异的光学性能，卤化铅钙钛矿纳米晶（PeNCs）已广泛应用于光电器件中。然而，局部陷阱态等表面缺陷的存在严重阻碍了它们在光电领域的实际应用。在这项工作中，我们开发了一种简单的方法，通过在 CsPbI 3 PeNC 成核完成后引入硫酸来减少表面缺陷。硫酸根离子有效地与钙钛矿纳米颗粒表面暴露的金属铅离子相互作用，导致表面钝化。该过程抑制非辐射复合并显着提高 PeNC 的发光效率。此外，与原始CsPbI 3 PeNC相比，含SO 4 2–的钝化CsPbI 3 PeNC表现出较低的整体能级结构，从而促进了电子注入的改善。受益于这种高效的钝化策略，基于SO 4 2–钝化PeNC的发光二极管（LED）表现出9.94%的最佳外量子产率和2182 cd m –2的亮度，超越了原始LED的性能PeNC。
更新日期：2024-03-20
中文翻译：
用于高效红色发光二极管的硫酸盐钝化 CsPbI3 钙钛矿纳米晶体
由于其优异的光学性能，卤化铅钙钛矿纳米晶（PeNCs）已广泛应用于光电器件中。然而，局部陷阱态等表面缺陷的存在严重阻碍了它们在光电领域的实际应用。在这项工作中，我们开发了一种简单的方法，通过在 CsPbI 3 PeNC 成核完成后引入硫酸来减少表面缺陷。硫酸根离子有效地与钙钛矿纳米颗粒表面暴露的金属铅离子相互作用，导致表面钝化。该过程抑制非辐射复合并显着提高 PeNC 的发光效率。此外，与原始CsPbI 3 PeNC相比，含SO 4 2–的钝化CsPbI 3 PeNC表现出较低的整体能级结构，从而促进了电子注入的改善。受益于这种高效的钝化策略，基于SO 4 2–钝化PeNC的发光二极管（LED）表现出9.94%的最佳外量子产率和2182 cd m –2的亮度，超越了原始LED的性能PeNC。
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