This article introduces a novel ultra-low-power reference-based low-noise amplifier (LNA) designed to reduce performance variations due to process, voltage, and temperature (PVT) when operating in the subthreshold region. The LNA is embedded within a reference circuit that directly controls the performance of the LNA over PVT variations. By combining the LNA with a reference, the PVT variations of the LNA are suppressed through the closed-loop feedback mechanism of the reference circuit while reducing the power overhead needed for separate reference and biasing circuits. This reduces the complexity of compensating for PVT variations compared with methods proposed by other works. Fabricated in TSMC’s 130-nm CMOS process, the experimental results show the proposed LNA is the least sensitive LNA to PVT variations while having the largest operating range with S21S_{21} and noise figure (NF) having a voltage and temperature coefficient of 2157 ppm/V ∘^{\circ} C over PVT variations and 1991 ppm/V ∘^{\circ} C over voltage and temperature variations, respectively. The proposed LNA achieves a gain of 13.96 dB with 4.51-dB NF while consuming 300 μ\mu W with the bias circuit at nominal operating conditions.

中文翻译：

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基于 300$\mu$W 2.4GHz PVT 不敏感亚阈值参考的 LNA


本文介绍了一种新型超低功耗基于基准的低噪声放大器 (LNA)，旨在减少在亚阈值区域工作时由于工艺、电压和温度 (PVT) 造成的性能变化。 LNA 嵌入在参考电路中，该电路直接控制 LNA 在 PVT 变化上的性能。通过将 LNA 与基准相结合，LNA 的 PVT 变化可通过基准电路的闭环反馈机制得到抑制，同时减少单独的基准和偏置电路所需的功率开销。与其他工作提出的方法相比，这降低了补偿 PVT 变化的复杂性。采用 TSMC 130 nm CMOS 工艺制造，实验结果表明，所提出的 LNA 是对 PVT 变化最不敏感的 LNA，同时具有 S21S_{21} 的最大工作范围以及电压和温度系数为 2157 ppm 的噪声系数 (NF) /V ∘^{\circ} C 随 PVT 变化而变化，1991 ppm/V ∘^{\circ} C 随电压和温度变化变化。所提出的 LNA 实现了 13.96 dB 的增益和 4.51 dB NF，同时偏置电路在标称工作条件下消耗 300 μμW。