HfC-SiC modified C/C composites containing formed Si-HfC-HfSi ablation resistant layer and SiC oxidation resistant layer were successfully prepared by reactive melt infiltration (RMI) combined with gaseous silicon infiltration (GSI). A comparative study was conducted on the anti-oxidation and anti-ablation performance of the C/C-HfC-SiC composites with GSI (noted as RG-CHS) and without GSI (noted as R-CHS). After oxidation at 1,500 °C for 200 min, the oxide film of RG-CHS remained intact. The mass and linear ablation rates decreased from 1.31 mg/s and 7.36 μm/s to 0.12 mg/s and −0.22 μm/s after GSI process, respectively. The introduction of low melting point phases and reducing surface defects can improve the high temperature oxidation resistance and plasma ablation resistance of the composites.

中文翻译：

---

同时具有抗超高温气流冲蚀和高温氧化性能的C/C-HfC-SiC复合材料


采用反应熔体渗透（RMI）结合气态硅渗透（GSI）成功制备了含有Si-HfC-HfSi抗烧蚀层和SiC抗氧化层的HfC-SiC改性C/C复合材料。对含GSI（记为RG-CHS）和不含GSI（记为R-CHS）的C/C-HfC-SiC复合材料的抗氧化和抗烧蚀性能进行了对比研究。在1500℃氧化200分钟后，RG-CHS的氧化膜保持完整。 GSI处理后，质量和线性烧蚀率分别从1.31 mg/s和7.36 μm/s下降至0.12 mg/s和-0.22 μm/s。低熔点相的引入和减少表面缺陷可以提高复合材料的高温抗氧化性和抗等离子体烧蚀性。