The remanent magnetization of ferromagnets has long been studied and used to store binary information. While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility of doing it by electrical means instead. In the 1990s, Slonczewski and Berger formulated the concept of current-induced spin torques in magnetic multilayers through which a spin-polarized current generated by a first ferromagnet may be used to switch the magnetization of a second one. This discovery drove the development of spin-transfer-torque magnetic random-access memories (MRAMs). More recent fundamental research revealed other types of current-induced torques named spin-orbit torques (SOTs) and will lead to a new generation of devices including SOT MRAMs and skyrmion-based devices. Parallel to these advances, multiferroics and their magnetoelectric coupling, first investigated experimentally in the 1960s, experienced a renaissance. Dozens of multiferroic compounds with new magnetoelectric coupling mechanisms were discovered and high-quality multiferroic films were synthesized (notably of ${\mathrm{BiFeO}}_3$), also leading to novel device concepts for information and communication technology such as the magnetoelectric spin-orbit (MESO) transistor. The story of the electrical switching of magnetization, which is discussed in this review, is that of a dance between fundamental research (in spintronics, condensed matter physics, and materials science) and technology (MRAMs, MESO transistors, microwave emitters, spin diodes, skyrmion-based devices, components for neuromorphics, etc.). This pas de deux has led to major scientific and technological breakthroughs in recent decades (such as the conceptualization of pure spin currents, the observation of magnetic skyrmions, and the discovery of spin-charge interconversion effects). As a result, this field has not only propelled MRAMs into consumer electronics products but also fueled discoveries in adjacent research areas such as ferroelectrics or magnonics. In this review, recent advances in the control of magnetism by electric fields and by current-induced torques are covered. Fundamental concepts in these two directions are reviewed first, their combination is then discussed, and finally current various families of devices harnessing the electrical control of magnetic properties for various application fields are addressed. The review concludes by giving perspectives in terms of both emerging fundamental physics concepts and new directions in materials science.

中文翻译：

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通过电场和电流感应扭矩对磁力进行电气控制

铁磁体的剩磁长期以来一直被研究并用于存储二进制信息。虽然早期的磁存储器设计依赖于局部产生的磁场的磁化切换，但凝聚态物理学的重要见解后来提出了通过电手段来实现这一点的可能性。在 20 世纪 90 年代，Slonczewski 和 Berger 提出了磁性多层中电流感应自旋扭矩的概念，通过该概念，第一个铁磁体产生的自旋极化电流可用于切换第二个铁磁体的磁化强度。这一发现推动了自旋转移矩磁性随机存取存储器（MRAM）的发展。最近的基础研究揭示了其他类型的电流感应扭矩，称为自旋轨道扭矩 (SOT)，并将催生新一代设备，包括 SOT MRAM 和基于斯格明子的设备。与这些进步并行的是，多铁材料及其磁电耦合在 20 世纪 60 年代首次通过实验研究，经历了复兴。发现了数十种具有新磁电耦合机制的多铁性化合物，并合成了高质量的多铁性薄膜（特别是${\mathrm{铁酸铋}}_3$），还催生了信息和通信技术的新颖器件概念，例如磁电自旋轨道（MESO）晶体管。本综述中讨论的磁化电切换的故事是基础研究（自旋电子学、凝聚态物理和材料科学）与技术（MRAM、MESO 晶体管、微波发射器、自旋二极管、基于斯格明子的设备、神经形态组件等）。近几十年来，这种双人舞带来了重大科学技术突破（例如纯自旋电流的概念化、磁性斯格明子的观察以及自旋电荷互变效应的发现）。因此，这一领域不仅推动 MRAM 进入消费电子产品，而且还推动了铁电体或磁振子学等邻近研究领域的发现。在这篇综述中，介绍了通过电场和电流感应扭矩控制磁性的最新进展。首先回顾这两个方向的基本概念，然后讨论它们的组合，最后讨论当前各种利用磁性电气控制用于各种应用领域的设备。该评论最后给出了新兴基础物理概念和材料科学新方向的观点。