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Additive engineering with 2,8-dibromo-dibenzothiophene-S,S-dioxide enabled tin-based perovskite solar cells with 14.98% power conversion efficiency
Energy & Environmental Science ( IF 32.4 ) Pub Date : 2024-03-13 , DOI: 10.1039/d3ee03359g
Xianyong Zhou 1, 2, 3, 4, 5 , Wenbo Peng 1, 3, 4, 5 , Zhixin Liu 1, 3, 4, 5, 6 , Yong Zhang 1, 3, 4, 5 , Luozheng Zhang 7 , Meiqing Zhang 8 , Chang Liu 2 , Lei Yan 9 , Xingzhu Wang 1, 2, 3, 4, 5 , Baomin Xu 1, 3, 4, 5
Affiliation  

As the most promising lead-free perovskite, tin-based perovskite has attracted much attention due to its suitable bandgap and low toxicity. However, many defects (tin vacancy defects caused by Sn2+ oxidation to Sn4+, grain boundary defects and point defects) in tin-based perovskite lead to serious losses in device efficiency. Here, a universal and effective doping strategy is delivered to improve the structure and optoelectronic properties of tin-based perovskite films through 2,8-dibromo-dibenzothiophene-S,S-dioxide (BrDS) doping. The introduction of BrDS can effectively inhibit the oxidation of Sn2+ and passivate grain boundary defects and point defects in the perovskite films. The tin-based perovskite film doped with BrDS exhibits higher carrier lifetime and crystal quality. As a result, the BrDS-doped device achieves a power conversion efficiency of 14.98% with a certified efficiency of 14.36%, which is one of the highest PCEs among all values reported to date for tin-based PSCs. In addition, the BrDS-doped PSC devices exhibit significantly improved long-term stability and improved operational stability in a N2 atmosphere. This work represents a noteworthy step towards manufacturing efficient and stable tin-based PSCs.

中文翻译:

采用 2,8-二溴二苯并噻吩-S,S-二氧化物的增材工程使锡基钙钛矿太阳能电池具有 14.98% 的功率转换效率

作为最有前途的无铅钙钛矿,锡基钙钛矿由于其合适的带隙和低毒性而备受关注。然而,锡基钙钛矿中的许多缺陷(由Sn 2+氧化成Sn 4+引起的锡空位缺陷、晶界缺陷和点缺陷)导致器件效率严重损失。在此,提出了一种通用且有效的掺杂策略,通过 2,8-二溴二苯并噻吩-SS-二氧化物(BrDS)掺杂来改善锡基钙钛矿薄膜的结构和光电性能。 BrDS的引入可以有效抑制Sn 2+的氧化,钝化钙钛矿薄膜中的晶界缺陷和点缺陷。掺杂BrDS的锡基钙钛矿薄膜表现出更高的载流子寿命和晶体质量。结果,掺杂 BrDS 的器件实现了 14.98% 的功率转换效率,认证效率为 14.36%,这是迄今为止报道的锡基 PSC 的所有值中最高的 PCE 之一。此外,BrDS掺杂的PSC器件表现出显着改善的长期稳定性以及在N 2气氛中改善的操作稳定性。这项工作代表着朝着制造高效、稳定的锡基 PSC 迈出了值得注意的一步。
更新日期:2024-03-13
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