The cover image is based on the Original Research Automatic optimal design of field plate for silicon on insulator lateral double-diffused metal oxide semiconductor using simulated annealing algorithm by Jing Chen et al., https://doi.org/10.1049/pel2.12658.

中文翻译：

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封面：使用模拟退火算法自动优化绝缘体上硅横向双扩散金属氧化物半导体场板

封面图片基于Jing Chen 等人使用模拟退火算法对绝缘体上硅横向双扩散金属氧化物半导体场板进行自动优化设计的原创研究，https://doi.org/10.1049/pel2.12658 。