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Ideal Photodetector Based on WS2/CuInP2S6 Heterostructure by Combining Band Engineering and Ferroelectric Modulation
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2024-03-08 , DOI: 10.1021/acsami.3c16815 Xiqiang Chen 1 , Qiyang Zhang 1 , Junhao Peng 2 , Wei Gao 3 , Mengmeng Yang 3 , Peng Yu 4 , Jiandong Yao 4 , Ying Liang 5 , Ye Xiao 1 , Zhaoqiang Zheng 1 , Jingbo Li 6
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2024-03-08 , DOI: 10.1021/acsami.3c16815 Xiqiang Chen 1 , Qiyang Zhang 1 , Junhao Peng 2 , Wei Gao 3 , Mengmeng Yang 3 , Peng Yu 4 , Jiandong Yao 4 , Ying Liang 5 , Ye Xiao 1 , Zhaoqiang Zheng 1 , Jingbo Li 6
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Two-dimensional van der Waals (2D vdW) heterostructure photodetectors have garnered significant attention for their potential applications in next-generation optoelectronic systems. However, current 2D vdW photodetectors inevitably encounter compromises between responsivity, detectivity, and response time due to the absence of multilevel regulation for free and photoexcited carriers, thereby restricting their widespread applications. To address this challenge, we propose an efficient 2D WS2/CuInP2S6 vdW heterostructure photodetector by combining band engineering and ferroelectric modulation. In this device, the asymmetric conduction and valence band offsets effectively block the majority carriers (free electrons), while photoexcited holes are efficiently tunneled and rapidly collected by the bottom electrode. Additionally, the ferroelectric CuInP2S6 layer generates polarization states that reconfigure the built-in electric field, reducing dark current and facilitating the separation of photocarriers. Moreover, photoelectrons are trapped during long-distance lateral transport, resulting in a high photoconductivity gain. Consequently, the device achieves an impressive responsivity of 88 A W–1, an outstanding specific detectivity of 3.4 × 1013 Jones, and a fast response time of 37.6/371.3 μs. Moreover, the capability of high-resolution imaging under various wavelengths and fast optical communication has been successfully demonstrated using this device, highlighting its promising application prospects in future optoelectronic systems.
中文翻译：
结合能带工程和铁电调制的基于WS2/CuInP2S6异质结构的理想光电探测器
二维范德华（2D vdW）异质结构光电探测器因其在下一代光电系统中的潜在应用而受到广泛关注。然而，由于缺乏对自由载流子和光激发载流子的多级调控，当前的2D vdW光电探测器不可避免地会遇到响应率、探测率和响应时间之间的折衷，从而限制了其广泛应用。为了应对这一挑战，我们通过结合能带工程和铁电调制提出了一种高效的2D WS 2 /CuInP 2 S 6 vdW异质结构光电探测器。在该器件中，不对称的导带和价带偏移有效地阻挡了多数载流子（自由电子），而光生空穴被底部电极有效地隧道化和快速收集。此外，铁电CuInP 2 S 6层产生偏振态，重新配置内置电场，减少暗电流并促进光载流子的分离。此外，光电子在长距离横向传输过程中被捕获，从而产生高光电导增益。因此，该器件实现了令人印象深刻的 88 AW –1响应度、3.4 × 10 13 Jones 的出色比探测率以及 37.6/371.3 µs 的快速响应时间。此外，该器件已成功演示了各种波长下的高分辨率成像和快速光通信的能力，凸显了其在未来光电系统中的广阔应用前景。
更新日期：2024-03-08
中文翻译：
结合能带工程和铁电调制的基于WS2/CuInP2S6异质结构的理想光电探测器
二维范德华（2D vdW）异质结构光电探测器因其在下一代光电系统中的潜在应用而受到广泛关注。然而，由于缺乏对自由载流子和光激发载流子的多级调控，当前的2D vdW光电探测器不可避免地会遇到响应率、探测率和响应时间之间的折衷，从而限制了其广泛应用。为了应对这一挑战，我们通过结合能带工程和铁电调制提出了一种高效的2D WS 2 /CuInP 2 S 6 vdW异质结构光电探测器。在该器件中，不对称的导带和价带偏移有效地阻挡了多数载流子（自由电子），而光生空穴被底部电极有效地隧道化和快速收集。此外，铁电CuInP 2 S 6层产生偏振态，重新配置内置电场，减少暗电流并促进光载流子的分离。此外，光电子在长距离横向传输过程中被捕获，从而产生高光电导增益。因此，该器件实现了令人印象深刻的 88 AW –1响应度、3.4 × 10 13 Jones 的出色比探测率以及 37.6/371.3 µs 的快速响应时间。此外，该器件已成功演示了各种波长下的高分辨率成像和快速光通信的能力，凸显了其在未来光电系统中的广阔应用前景。
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