提高表面改性以及铁电和热释电效应引起的 P(VDF-TrFE)/Bi2Se3/Si 异质结的横向光敏性能,Journal of Materials Chemistry C

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提高表面改性以及铁电和热释电效应引起的 P(VDF-TrFE)/Bi2Se3/Si 异质结的横向光敏性能
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2024-03-06 , DOI: 10.1039/d4tc00139g
Qing Wang ₁ , Guojuan Zhang ₁ , Tao Zhang ₁ , Siyang Guo ₁ , Jihong Liu ₁ , Shufang Wang ₁ , Shuang Qiao ₁

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Bi ₂ Se ₃不仅具有高载流子迁移率，而且具有出色的热稳定性和鲁棒性，使其成为极端环境下超快检测和开关应用的理想材料。_{在这项工作中，利用Bi 2} Se ₃ /Si异质结和P(VDF-TrFE)表面双功能层开发了一种高灵敏度自供电位置敏感探测器（PSD）。Bi ₂ Se ₃ /Si异质结具有360-1064 nm的宽光谱范围，能够提供高达151.6 mV mm ^-1的卓越位置灵敏度，非线性保持在4%以下。通过添加P(VDF-TrFE)改性层，Bi ₂ Se ₃的表面电导率降低，导致位置灵敏度提高到333.33 mV mm ^-1。此外，P(VDF-TrFE)的铁电和热释电特性能够有效分离和传输光生载流子，从而进一步提高位置灵敏度高达710 mV mm ^-1，增幅高达368.3%。此外，PSD 还表现出超快的响应时间，值低至 35/50 μs。PSD的优异性能可归因于P(VDF-TrFE)引起的横向光伏效应的纵向和横向光电过程的双重优化。这些发现对于使用新型材料和铁电体开发高性能光敏器件具有重要意义。

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Boosting lateral photosensing performances in a P(VDF-TrFE)/Bi2Se3/Si heterojunction induced by surface modification and ferroelectric and pyroelectric effects

Bi₂Se₃ exhibits not only high carrier mobility but also exceptional thermal stability and robustness, making it an ideal material for ultrafast detection and switching applications in extreme environments. In this work, a high-sensitivity self-powered position-sensitive detector (PSD) is developed using a Bi₂Se₃/Si heterojunction and a P(VDF-TrFE) surface dual-functional layer. The Bi₂Se₃/Si heterojunction displays a wide spectral range of 360–1064 nm, and is capable of providing a remarkable position sensitivity of up to 151.6 mV mm⁻¹ with nonlinearity being kept under 4%. Through the addition of the P(VDF-TrFE) modification layer, the surface electrical conductivity of Bi₂Se₃ is lowered, leading to an enhanced position sensitivity of 333.33 mV mm⁻¹. Moreover, the ferroelectric and pyroelectric properties of P(VDF-TrFE) enable the effective separation and transport of photo-generated carriers, resulting in further improved position sensitivity as high as 710 mV mm⁻¹, with an impressive 368.3% increase. In addition, the PSD also demonstrates an ultrafast response time, with values as low as 35/50 μs. The exceptional performance of the PSD can be attributed to the dually optimized longitudinal and transverse photoelectric processes of the lateral photovoltaic effect induced by the P(VDF-TrFE). These findings carry significant implications for the development of high-performance photosensing devices using novel materials and ferroelectrics.

更新日期：2024-03-06

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