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S-NiSe/HG Nanocomposites with Balanced Dielectric Loss Encapsulated in Room-Temperature Self-Healing Polyurethane for Microwave Absorption and Corrosion Protection
ACS Nano ( IF 15.8 ) Pub Date : 2024-03-04 , DOI: 10.1021/acsnano.3c13057 Yunfei Zhang 1, 2 , Lei Zhang 1 , Lingfeng Tang 1 , Ran Du 1 , Baoliang Zhang 1, 3
ACS Nano ( IF 15.8 ) Pub Date : 2024-03-04 , DOI: 10.1021/acsnano.3c13057 Yunfei Zhang 1, 2 , Lei Zhang 1 , Lingfeng Tang 1 , Ran Du 1 , Baoliang Zhang 1, 3
Affiliation
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Exploring anticorrosion electromagnetic wave (EMW) absorbing materials in harsh conditions remains a challenge. Herein, S-NiSe/HG nanocomposites encapsulated in room-temperature self-healing polyurethane (S-NiSe/HG/SPU) were exploited as superior anticorrosion EMW absorbing materials. A dual-defect engineering collaborative Schottky interface construction endows S-NiSe/HG with a high vacancy concentration, abundant defects, and moderate conductivity. These structural merits synergistically balance dielectric loss by enhancing dipole-interface polarization loss and optimizing conduction loss. As a result, S-NiSe/HG demonstrates the optimal EMW absorption performance with a minimum reflection loss (RLmin) of −54.8 dB and an adequate absorption bandwidth (EAB) of 7.1 GHz. Besides, S-NiSe/HG/SPU combines the maze effect of S-NiSe/HG with the active repair capability of SPU, thereby providing long-term corrosion resistance for the Mg alloy. Even under corrosion for 10 days, S-NiSe/HG/SPU affords a low corrosion current density (1.3 × 10–5 A) and high charge transfer resistance (3796 Ω cm2). Overall, this work provides valuable insights for in-depth exploration of dielectric loss and development of multifunctional EMW-absorbing materials.
中文翻译：
具有平衡介电损耗的 S-NiSe/HG 纳米复合材料封装在室温自修复聚氨酯中，用于微波吸收和腐蚀防护
探索恶劣条件下的防腐电磁波（EMW）吸收材料仍然是一个挑战。在此，封装在室温自修复聚氨酯（S-NiSe/HG/SPU）中的S-NiSe/HG纳米复合材料被开发为优异的防腐EMW吸收材料。双缺陷工程协同肖特基界面构造赋予S-NiSe/HG具有高空位浓度、丰富的缺陷和中等的电导率。这些结构优点通过增强偶极子界面极化损耗和优化传导损耗来协同平衡介电损耗。结果，S-NiSe/HG 表现出最佳的 EMW 吸收性能，最小反射损耗 (RL min ) 为 -54.8 dB，充足的吸收带宽 (EAB) 为 7.1 GHz。此外，S-NiSe/HG/SPU将S-NiSe/HG的迷宫效应与SPU的主动修复能力相结合，从而为镁合金提供长期的耐腐蚀性能。即使腐蚀10天，S-NiSe/HG/SPU也能提供低腐蚀电流密度(1.3 × 10 –5 A)和高电荷转移电阻(3796 Ω cm 2 )。总的来说，这项工作为深入探索介电损耗和开发多功能电磁波吸收材料提供了宝贵的见解。
更新日期：2024-03-04
中文翻译：
具有平衡介电损耗的 S-NiSe/HG 纳米复合材料封装在室温自修复聚氨酯中，用于微波吸收和腐蚀防护
探索恶劣条件下的防腐电磁波（EMW）吸收材料仍然是一个挑战。在此，封装在室温自修复聚氨酯（S-NiSe/HG/SPU）中的S-NiSe/HG纳米复合材料被开发为优异的防腐EMW吸收材料。双缺陷工程协同肖特基界面构造赋予S-NiSe/HG具有高空位浓度、丰富的缺陷和中等的电导率。这些结构优点通过增强偶极子界面极化损耗和优化传导损耗来协同平衡介电损耗。结果，S-NiSe/HG 表现出最佳的 EMW 吸收性能，最小反射损耗 (RL min ) 为 -54.8 dB，充足的吸收带宽 (EAB) 为 7.1 GHz。此外，S-NiSe/HG/SPU将S-NiSe/HG的迷宫效应与SPU的主动修复能力相结合，从而为镁合金提供长期的耐腐蚀性能。即使腐蚀10天，S-NiSe/HG/SPU也能提供低腐蚀电流密度(1.3 × 10 –5 A)和高电荷转移电阻(3796 Ω cm 2 )。总的来说，这项工作为深入探索介电损耗和开发多功能电磁波吸收材料提供了宝贵的见解。
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