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Strong Sliding Ferroelectricity and Interlayer Sliding Controllable Spintronic Effect in Two-Dimensional HgI2 Layers
Nano Letters ( IF 9.6 ) Pub Date : 2024-03-01 , DOI: 10.1021/acs.nanolett.3c04869 Xinfeng Chen 1 , Xinkai Ding 1, 2 , Gaoyang Gou 1 , Xiao Cheng Zeng 3
Nano Letters ( IF 9.6 ) Pub Date : 2024-03-01 , DOI: 10.1021/acs.nanolett.3c04869 Xinfeng Chen 1 , Xinkai Ding 1, 2 , Gaoyang Gou 1 , Xiao Cheng Zeng 3
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Exploration of two-dimensional (2D) sliding ferroelectric (FE) materials with experimentally detectable ferroelectricity and value-added novel functionalities is highly sought for the development of 2D “slidetronics”. Herein, based on first-principles calculations, we identify the synthesizable van der Waals (vdW) layered crystals HgX2 (X = Br and I) as a new class of 2D sliding ferroelectrics. Both HgBr2 and HgI2 in 2D multilayered forms adopt the preferential stacking sequence, leading to room temperature stable out-of-plane (vertical) ferroelectricity that can be reversed via the sliding of adjacent monolayers. Owing to strong interlayer coupling and interfacial charge rearrangement, 2D HgI2 layers possess strong sliding ferroelectricity up to 0.16 μC/cm2, readily detectable in experiment. Moreover, robust sliding ferroelectricity and interlayer sliding controllable Rashba spin texture of FE-HgI2 layers enable potential applications as 2D spintronic devices such that the electric control of electron spin detection can be realized at the 2D regime.
中文翻译：
二维HgI2层中的强滑动铁电性和层间滑动可控自旋电子效应
对于二维“滑动电子学”的发展，人们高度重视对具有实验可检测铁电性和增值新颖功能的二维（2D）滑动铁电（FE）材料的探索。在此，基于第一性原理计算，我们将可合成的范德华（vdW）层状晶体HgX 2 （X = Br和I）确定为一类新型2D滑动铁电体。二维多层形式的HgBr 2和HgI 2均采用优先堆叠顺序，从而产生室温稳定的面外（垂直）铁电性，可以通过相邻单层的滑动来反转。由于强的层间耦合和界面电荷重排，2D HgI 2层具有高达0.16 μC/cm 2的强滑动铁电性，在实验中很容易检测到。此外，FE-HgI 2层的鲁棒滑动铁电性和层间滑动可控Rashba自旋织构使得作为2D自旋电子器件的潜在应用成为可能，从而可以在2D状态下实现电子自旋检测的电控制。
更新日期：2024-03-01
中文翻译：
二维HgI2层中的强滑动铁电性和层间滑动可控自旋电子效应
对于二维“滑动电子学”的发展，人们高度重视对具有实验可检测铁电性和增值新颖功能的二维（2D）滑动铁电（FE）材料的探索。在此，基于第一性原理计算，我们将可合成的范德华（vdW）层状晶体HgX 2 （X = Br和I）确定为一类新型2D滑动铁电体。二维多层形式的HgBr 2和HgI 2均采用优先堆叠顺序，从而产生室温稳定的面外（垂直）铁电性，可以通过相邻单层的滑动来反转。由于强的层间耦合和界面电荷重排，2D HgI 2层具有高达0.16 μC/cm 2的强滑动铁电性，在实验中很容易检测到。此外，FE-HgI 2层的鲁棒滑动铁电性和层间滑动可控Rashba自旋织构使得作为2D自旋电子器件的潜在应用成为可能，从而可以在2D状态下实现电子自旋检测的电控制。
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