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Photodegradable Polyurethane Resist with High Photosensitivity Based on Hexaarylbiimidazole Molecule Photoswitch
ACS Applied Polymer Materials ( IF 4.4 ) Pub Date : 2024-02-27 , DOI: 10.1021/acsapm.3c02610 Shi-Li Xiang 1 , Peng-Fei Luo 2 , Ying-Yi Ren 2 , Ling-Yan Peng 2 , Hong Yin 3 , Jun-Dan Huang 2 , Pan Hong 2 , Qi Yu 2 , Rui Tian 2 , Chong Li 2 , Jun Liu 1 , Ming-Qiang Zhu 2
ACS Applied Polymer Materials ( IF 4.4 ) Pub Date : 2024-02-27 , DOI: 10.1021/acsapm.3c02610 Shi-Li Xiang 1 , Peng-Fei Luo 2 , Ying-Yi Ren 2 , Ling-Yan Peng 2 , Hong Yin 3 , Jun-Dan Huang 2 , Pan Hong 2 , Qi Yu 2 , Rui Tian 2 , Chong Li 2 , Jun Liu 1 , Ming-Qiang Zhu 2
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As the key material for semiconductor manufacturing, the production technology of a photoresist (PR) is complex, with many varieties and specifications. Therein, the synthesis of current resins and photosensitizers used for the preparation of the i-line photoresist is complicated, and the reaction products may even cause lens pollution. Herein, a kind of photodegradable polyurethane (PU) positive photoresist with a simple system was designed and prepared, in which photocleavable hexaarylbiimidazole (HABI) and tert-butylhydroquinone (TBHQ) were used as a cross-linker and a radical scavenger, respectively. The C–N bond inside the HABI unit was broken under UV irradiation, causing the reversible transformation of HABI into two triphenylimidazole radicals (TPIRs), which were subsequently quenched by TBHQ. Thus, the superpolymer formed an oligomer that could be dissolved in the developer. It was found that HABI-PU PR showed excellent photosensitivity as a positive photoresist during micro–nano manufacturing. The relationship between the content of HABI and TBHQ and resolution and the reaction mechanism between TPIR and TBHQ were studied systematically, and a linear pattern with 1 μm dimension was obtained finally.
中文翻译：
基于六芳基联咪唑分子光电开关的高光敏性光降解聚氨酯光刻胶
光刻胶（PR）作为半导体制造的关键材料，其生产工艺复杂，品种规格较多。其中，目前用于制备i线光刻胶的树脂和光敏剂合成复杂，反应产物甚至会造成镜片污染。本文设计并制备了一种简单体系的可光降解聚氨酯（PU）正性光刻胶，其中光裂解六芳基联咪唑（HABI）和叔丁基氢醌（TBHQ）分别用作交联剂和自由基清除剂。HABI单元内部的C-N键在紫外线照射下断裂，导致HABI可逆转化为两个三苯基咪唑自由基（TPIR），随后被TBHQ猝灭。因此，超聚合物形成可以溶解在显影剂中的低聚物。研究发现HABI-PU PR作为正性光刻胶在微纳米制造过程中表现出优异的光敏性。系统研究了HABI和TBHQ的含量与分辨率的关系以及TPIR和TBHQ的反应机理，最终得到了1 μm尺寸的线性图案。
更新日期：2024-02-27
中文翻译：
基于六芳基联咪唑分子光电开关的高光敏性光降解聚氨酯光刻胶
光刻胶（PR）作为半导体制造的关键材料，其生产工艺复杂，品种规格较多。其中，目前用于制备i线光刻胶的树脂和光敏剂合成复杂，反应产物甚至会造成镜片污染。本文设计并制备了一种简单体系的可光降解聚氨酯（PU）正性光刻胶，其中光裂解六芳基联咪唑（HABI）和叔丁基氢醌（TBHQ）分别用作交联剂和自由基清除剂。HABI单元内部的C-N键在紫外线照射下断裂，导致HABI可逆转化为两个三苯基咪唑自由基（TPIR），随后被TBHQ猝灭。因此，超聚合物形成可以溶解在显影剂中的低聚物。研究发现HABI-PU PR作为正性光刻胶在微纳米制造过程中表现出优异的光敏性。系统研究了HABI和TBHQ的含量与分辨率的关系以及TPIR和TBHQ的反应机理，最终得到了1 μm尺寸的线性图案。
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