In this article, an enhanced class-F voltage-controlled oscillator (VCO) with common-mode-noise self-cancellation (CM-NC) and common-mode-noise isolation (CM-NI) technique is proposed. With the proposed CM-NC technique, the common-mode-noise current of the drain coil and that of the nearby source coil are in the opposite direction. Therefore, the magnetic fields generated by the two coils cancel each other, which reduces the noise injected into the VCO from power supply and the ground node. Moreover, the principle of decoupling between the two inductors is also employed to eliminate the influence of the common-mode tail inductor on the differential mode. By winding the gate coil into a double-turn structure, the coupling noise from the drain inductor to the gate is opposite to the induced current of the gate coil, thereby cutting off the noise coupling path from the drain to the gate. Thanks to the dual-core 8-shaped inductor structure, the phase noise (PN) is improved without increasing the area, compared with existing methods using separated and dedicated tail filtering inductors. The VCO is fabricated in a 65-nm complementary metal–oxide–semiconductor (CMOS) technology. The measured tuning range is 21.7% from 11.5 to 14.3 GHz. The PN and figure of merit (FoM) at 1-MHz offset are −119.2 and 192.8 dBc/Hz, respectively. The power consumption across the frequency tuning range is 5.6–10 mW. The core area is 0.065 mm2 and the total area is 0.26 mm2.

中文翻译：

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具有共模噪声自消除和隔离技术的增强型 F 类双核 VCO


本文提出了一种具有共模噪声自消除 (CM-NC) 和共模噪声隔离 (CM-NI) 技术的增强型 F 类压控振荡器 (VCO)。利用所提出的 CM-NC 技术，漏极线圈的共模噪声电流与附近源线圈的共模噪声电流方向相反。因此，两个线圈产生的磁场相互抵消，从而减少了从电源和接地节点注入VCO的噪声。另外，还采用了两个电感之间的去耦原理，消除了共模尾部电感对差模的影响。通过将栅极线圈绕成双匝结构，使漏极电感到栅极的耦合噪声与栅极线圈的感应电流相反，从而切断从漏极到栅极的噪声耦合路径。得益于双芯8字形电感结构，与现有使用分离式专用尾部滤波电感的方法相比，在不增加面积的情况下改善了相位噪声（PN）。 VCO 采用 65 nm 互补金属氧化物半导体 (CMOS) 技术制造。测得的调谐范围为 11.5 至 14.3 GHz 的 21.7%。 1 MHz 偏移处的 PN 和品质因数 (FoM) 分别为 -119.2 和 192.8 dBc/Hz。频率调谐范围内的功耗为 5.6–10 mW。核心面积为0.065 mm2，总面积为0.26 mm2。