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Thermal Transport Properties of β-Ga2O3 Thin Films on Si and SiC Substrates Fabricated by an Ion-Cutting Process
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2024-02-27 , DOI: 10.1021/acsaelm.3c01614
Wenhui Xu 1 , Tiancheng Zhao 1, 2 , Lianghui Zhang 3 , Kang Liu 3 , Huarui Sun 3 , Zhenyu Qu 1, 2 , Tiangui You 1, 2 , Ailun Yi 1 , Kai Huang 1 , Genquan Han 4 , Fengwen Mu 5 , Tadatomo Suga 6 , Xin Ou 1, 2 , Yue Hao 4
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2024-02-27 , DOI: 10.1021/acsaelm.3c01614
Wenhui Xu 1 , Tiancheng Zhao 1, 2 , Lianghui Zhang 3 , Kang Liu 3 , Huarui Sun 3 , Zhenyu Qu 1, 2 , Tiangui You 1, 2 , Ailun Yi 1 , Kai Huang 1 , Genquan Han 4 , Fengwen Mu 5 , Tadatomo Suga 6 , Xin Ou 1, 2 , Yue Hao 4
Affiliation
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Integrating β-Ga2O3 films onto a highly thermally conductive substrate is regarded as a promising method to remove the heat from β-Ga2O3 high-power devices, ultimately increasing their reliability and performance. In this work, we fabricated three wafer-scale heterogeneous integration materials (HIMs), i.e., β-Ga2O3–SiC (GaOSiC), β-Ga2O3–Al2O3–SiC (GaOISiC), and β-Ga2O3–Al2O3–Si (GaOISi), by using ion-cutting and surface-activated bonding techniques. The heat block effect of the intermediate amorphous Al2O3 layer from β-Ga2O3 to SiC is significantly relieved by employing a post-annealing process. Furthermore, the Al2O3 layer blocks the interfusion of elements between β-Ga2O3 and the host substrate, avoiding the degradation of thermal conductivity of β-Ga2O3 films after post-annealing. Benefited from this, a relatively high thermal conductivity (9.3 W/m·K) is achieved among β-Ga2O3 thin films with the same thickness and the effective thermal boundary conductance was improved in all β-Ga2O3 HIMs. One to two orders of magnitude reduction in the junction-to-package device thermal resistance is revealed by the thermal modeling of β-Ga2O3 HIM metal-oxide-semiconductor field-effect transistors, which demonstrates that extremely high heat dissipation can be realized by optimizing the TBReff value and integrating with thermally conductive substrates (SiC and diamond). These results give key guidelines to engineer the thermal transport properties of β-Ga2O3 HIMs for device thermal management.
中文翻译：
离子切割工艺制备的 Si 和 SiC 衬底上 β-Ga2O3 薄膜的热传输特性
将β-Ga 2 O 3薄膜集成到高导热基板上被认为是一种有前途的方法，可以消除β-Ga 2 O 3高功率器件的热量，最终提高其可靠性和性能。在这项工作中，我们制造了三种晶圆级异质集成材料（HIM），即β-Ga 2 O 3 –SiC（GaOSiC）、β-Ga 2 O 3 –Al 2 O 3 –SiC（GaOISiC）和β -Ga 2 O 3 –Al 2 O 3 –Si (GaOISi)，采用离子切割和表面活化键合技术。通过采用后退火工艺，中间非晶Al 2 O 3层从β-Ga 2 O 3到SiC的热阻效应得到显着缓解。此外，Al 2 O 3层阻挡了β-Ga 2 O 3与基质衬底之间的元素混入，避免了后退火后β-Ga 2 O 3薄膜的热导率下降。受益于此，相同厚度的β-Ga 2 O 3薄膜之间实现了相对较高的热导率（9.3 W/m·K），并且所有β-Ga 2 O 3 HIM的有效热边界传导率均得到提高。通过 β-Ga 2 O 3 HIM 金属氧化物半导体场效应晶体管的热建模，结点到封装器件的热阻降低了一到两个数量级，这表明可以实现极高的散热性能。通过优化 TBR eff值并与导热基板（SiC 和金刚石）集成来实现。这些结果为设计用于器件热管理的 β-Ga 2 O 3 HIM的热传输特性提供了重要指导。
更新日期：2024-02-27
中文翻译：
离子切割工艺制备的 Si 和 SiC 衬底上 β-Ga2O3 薄膜的热传输特性
将β-Ga 2 O 3薄膜集成到高导热基板上被认为是一种有前途的方法，可以消除β-Ga 2 O 3高功率器件的热量，最终提高其可靠性和性能。在这项工作中，我们制造了三种晶圆级异质集成材料（HIM），即β-Ga 2 O 3 –SiC（GaOSiC）、β-Ga 2 O 3 –Al 2 O 3 –SiC（GaOISiC）和β -Ga 2 O 3 –Al 2 O 3 –Si (GaOISi)，采用离子切割和表面活化键合技术。通过采用后退火工艺，中间非晶Al 2 O 3层从β-Ga 2 O 3到SiC的热阻效应得到显着缓解。此外，Al 2 O 3层阻挡了β-Ga 2 O 3与基质衬底之间的元素混入，避免了后退火后β-Ga 2 O 3薄膜的热导率下降。受益于此，相同厚度的β-Ga 2 O 3薄膜之间实现了相对较高的热导率（9.3 W/m·K），并且所有β-Ga 2 O 3 HIM的有效热边界传导率均得到提高。通过 β-Ga 2 O 3 HIM 金属氧化物半导体场效应晶体管的热建模，结点到封装器件的热阻降低了一到两个数量级，这表明可以实现极高的散热性能。通过优化 TBR eff值并与导热基板（SiC 和金刚石）集成来实现。这些结果为设计用于器件热管理的 β-Ga 2 O 3 HIM的热传输特性提供了重要指导。
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