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A Compact 19.7- to 43.8-GHz Power Amplifier With 20.3-dBm Psat and 35.5% PAE in 28-nm Bulk CMOS
IEEE Journal of Solid-State Circuits ( IF 4.6 ) Pub Date : 2024-02-19 , DOI: 10.1109/jssc.2024.3364096
Weisen Zeng 1 , Li Gao 1 , Ning-Zheng Sun 1 , Hui-Yang Li 1 , Jin-Xu Xu 1 , Hongtao Xu 2 , Quan Xue 1 , Xiuyin Zhang 1
Affiliation  

This article presents a broadband millimeter-wave (mm-wave) linear power amplifier (PA) to support 5G and beyond wireless communication. An asynchronously tuned coupled resonator (ATCR) circuit model is introduced to effectively design PA’s non-ideal transformer-based broadband output matching network (OMN). Two adaptive feedback linearizers (AFLs) and multi-gated transistor (MGTR) techniques are adapted to optimize the linearity. Both amplitude-to-amplitude (AM−AM) and amplitude-to-phase modulation (AM−PM) distortion are improved over one octave with these techniques. A prototype PA is implemented in 28-nm bulk CMOS to verify the proposed ideas. The measured PA realizes 76% $S_{21}\,\,-$ 3-dB fraction bandwidth (FBW) from 19.7 to 43.8 GHz, fully supporting five operating bands in 5G new radio (NR) frequency range 2 (FR2), i.e., $n$ 257– $n$ 261. The measured $\vert $ AM−PM $\vert $ is less than 4° over 24−43 GHz. The large-signal measurement results show that the PA realizes 18.7−20.3-dBm $P_{\mathrm {sat}}$ , 16.8−19-dBm OP1dB, 24.9%−35.5% PAEmax, and 20.6%–29.7% PAEP1dB over 22−40 GHz. For 5G NR FR2 200-MHz 64-QAM signals [9.7-dB peak-to-average power ratio (PAPR)], the PA achieves an average $P_{\mathrm {out}}$ /PAE of 11.0 dBm/8.7% with −25.2-dB EVMrms at 24 GHz. The proposed PA achieves a compact size with a core area of 0.088 mm2, making it very suitable for large-scale phased array beamformers.

中文翻译:


采用 28 nm Bulk CMOS 封装、具有 20.3 dBm Psat 和 35.5% PAE 的紧凑型 19.7 至 43.8 GHz 功率放大器



本文介绍了一种支持 5G 及其他无线通信的宽带毫米波 (mm-wave) 线性功率放大器 (PA)。引入异步调谐耦合谐振器(ATCR)电路模型来有效设计PA基于非理想变压器的宽带输出匹配网络(OMN)。采用两种自适应反馈线性化器 (AFL) 和多栅晶体管 (MGTR) 技术来优化线性度。通过这些技术,幅值调制 (AM−AM) 和幅相调制 (AM−PM) 失真均改善了一个倍频程。原型 PA 在 28 nm 体 CMOS 中实现,以验证所提出的想法。测量的 PA 在 19.7 至 43.8 GHz 范围内实现 76% $S_{21}\,\,-$ 3 dB 分数带宽 (FBW),完全支持 5G 新无线电 (NR) 频率范围 2 (FR2) 中的五个工作频段,即$n$ 257–$n$ 261。在24−43 GHz 上测量的$\vert $ AM−PM $\vert $ 小于4°。大信号测量结果表明,PA在22小时内实现了18.7−20.3-dBm $P_{\mathrm {sat}}$、16.8−19-dBm OP1dB、24.9%−35.5% PAEmax和20.6%–29.7% PAEP1dB −40GHz。对于 5G NR FR2 200 MHz 64-QAM 信号 [9.7 dB 峰值平均功率比 (PAPR)],PA 的平均 $P_{\mathrm {out}}$ /PAE 为 11.0 dBm/8.7% 24 GHz 时 EVMrms 为 −25.2dB。所提出的 PA 实现了核心面积为 0.088 mm2 的紧凑尺寸,使其非常适合大型相控阵波束形成器。
更新日期:2024-02-19
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