A new piezoelectric crystal, KCsMoP2O9 (KCMP), was successfully grown by the Kyropoulos method. The electro-elastic properties of KCMP crystal were characterized by the impedance method. The full set of elastic constants was determined by solving the Christoffel equation. Remarkably, the crystal exhibits a large face-shear piezoelectric coefficient of d14 = 16.2 pC/N, surpassing that of the extensively studied ordered langasite crystal Ca3TaGa3Si2O14 (d14 = 10.4 pC/N). A fundamental shear horizontal (SH0) wave piezoelectric transducer was developed, leveraging the face-shear-mode of KCMP wafers. Finite element simulations have conclusively demonstrated the KCMP-based transducer's exceptional ability to efficiently excite and capture the pure SH0 wave, independently along two orthogonal main directions (0°/180° and 90°/270°). These results were subsequently corroborated through experimental validation at temperatures up to 300 °C, highlighting the considerable promise of KCMP crystals for utilization in non-destructive testing and structural health monitoring applications.

中文翻译：

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KCsMoP2O9 晶体的电弹性特性：利用强压电性技术在导波换能器中的应用


一种新的压电晶体 KCsMoP2O9 （KCMP） 通过 Kyropoulos 方法成功生长。采用阻抗法表征了 KCMP 晶体的电弹性。通过求解 Christoffel 方程确定完整的弹性常数集。值得注意的是，该晶体表现出 d14 = 16.2 pC/N 的大面剪切压电系数，超过了广泛研究的有序方石晶体 Ca3TaGa3Si2O14 （d14 = 10.4 pC/N）。利用 KCMP 晶片的面剪切模式开发了一种基本剪切水平 （SH0） 波压电换能器。有限元仿真最终证明了基于 KCMP 的传感器能够沿两个正交主方向（0°/180° 和 90°/270°）独立地有效激发和捕获纯 SH0 波。这些结果随后通过在高达 300 °C 的温度下进行实验验证得到证实，突出了 KCMP 晶体在无损检测和结构健康监测应用中的巨大前景。