A new piezoelectric crystal, KCsMoPO (KCMP), was successfully grown by the Kyropoulos method. The electro-elastic properties of KCMP crystal were characterized by the impedance method. The full set of elastic constants was determined by solving the Christoffel equation. Remarkably, the crystal exhibits a large face-shear piezoelectric coefficient of = 16.2 pC/N, surpassing that of the extensively studied ordered langasite crystal CaTaGaSiO ( = 10.4 pC/N). A fundamental shear horizontal (SH) wave piezoelectric transducer was developed, leveraging the face-shear-mode of KCMP wafers. Finite element simulations have conclusively demonstrated the KCMP-based transducer's exceptional ability to efficiently excite and capture the pure SH wave, independently along two orthogonal main directions (0°/180° and 90°/270°). These results were subsequently corroborated through experimental validation at temperatures up to 300 °C, highlighting the considerable promise of KCMP crystals for utilization in non-destructive testing and structural health monitoring applications.

中文翻译：

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KCsMoP2O9 晶体的电弹性特性：利用强压电性进行导波换能器应用


通过泡生法成功生长了一种新型压电晶体 KCsMoPO (KCMP)。采用阻抗法表征了KCMP晶体的电弹性性能。全套弹性常数是通过求解 Christoffel 方程确定的。值得注意的是，该晶体表现出 = 16.2 pC/N 的大面剪切压电系数，超过了广泛研究的有序硅锰矿晶体 CaTaGaSiO (= 10.4 pC/N)。利用 KCMP 晶片的面剪切模式，开发了基本剪切水平 (SH) 波压电传感器。有限元模拟最终证明了基于 KCMP 的传感器具有沿两个正交主方向​​（0°/180° 和 90°/270°）独立地有效激发和捕获纯 SH 波的卓越能力。这些结果随后通过高达 300 °C 的温度下的实验验证得到证实，凸显了 KCMP 晶体在无损检测和结构健康监测应用中的巨大前景。