The exploration of two-dimensional antiferrovalley materials as potential candidates for valleytronics offers intriguing prospects to investigate exotic valley physics and develop next-generation nano-electronic devices. Achieving efficient anomalous valley Hall effect (AVHE) switching in antiferrovalley materials constitutes an important step towards their application, yet such advancement has been scarcely reported so far. In this study, we demonstrate, through first-principles calculations and model analysis, that the experimentally synthesized MnSe monolayer is a hitherto unexplored but exceptional antiferrovalley material with spontaneous valley polarization. And more importantly, by constructing a multiferroic MnSe/In2Se3 heterostructure, the desired nonvolatile on/off switching of the AVHE can be successfully realized through polarization reversal. This unique phenomenon, characterized by the emergence/annihilation of fully spin-polarized valley polarization, arises from the combined effect of strong magnetoelectric coupling-induced changes in magnetic anisotropy and PT symmetry breaking. Our findings provide a novel approach for achieving nonvolatile control of the AVHE in antiferrovalley materials, opening up significant opportunities for valleytronic applications.

中文翻译：

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磁电耦合驱动的反铁谷 MnSe 中的高效异常谷霍尔效应切换


探索二维反铁谷材料作为 valleytronics 的潜在候选者，为研究奇异的山谷物理学和开发下一代纳米电子器件提供了有趣的前景。在反铁谷材料中实现高效的异常谷霍尔效应 （AVHE） 切换是其应用的重要一步，但迄今为止，这种进展鲜有报道。在这项研究中，我们通过第一性原理计算和模型分析证明了实验合成的 MnSe 单层是一种迄今为止未被探索但特殊的反铁谷材料，具有自发的谷极化。更重要的是，通过构建多铁性 MnSe/In2Se3 异质结构，可以通过极化反转成功实现所需的 AVHE 非易失性开/关切换。这种独特的现象以完全自旋极化谷极化的出现/湮灭为特征，是强磁电耦合诱导的磁各向异性变化和 PT 对称性破坏的综合作用引起的。我们的研究结果为实现反铁谷材料中 AVHE 的非挥发性控制提供了一种新方法，为 valleytronic 应用开辟了重要机会。