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Molecularly Engineered Quinoxaline-Pyridyl Pyrazine Polymers for Field-Effect Transistors and Complementary Circuits
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2024-02-16 , DOI: 10.1021/acsaelm.3c01790 John Barron 1 , Salahuddin Attar 2 , Arash Ghobadi 1 , Shubhra Gangopadhyay 3 , Dusan Sredojevic 4 , Mohammed Al-Hashimi 2 , Suchismita Guha 1
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2024-02-16 , DOI: 10.1021/acsaelm.3c01790 John Barron 1 , Salahuddin Attar 2 , Arash Ghobadi 1 , Shubhra Gangopadhyay 3 , Dusan Sredojevic 4 , Mohammed Al-Hashimi 2 , Suchismita Guha 1
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Regioregularity in conjugated polymers plays a significant role in enhancing the semiconducting properties and narrowing the optical band gap. Two donor–acceptor copolymers, specifically quinoxaline-thienylenevinylene (P1) and regioregular pyridyl pyrazine-thienylenevinylene (P2), were synthesized and characterized. Their potential applications in organic field-effect transistors (FETs) and complementary inverter circuits were explored. P2 exhibits a narrower absorption spectrum with distinct vibronic peaks compared to P1. In both top-gate and bottom-gate FET architectures, the copolymers display p-type behavior, with P2 demonstrating approximately an order of magnitude higher carrier mobility (∼10–3 cm2/(V s)) than P1. The performance of the FETs is further improved by the surface treatment of the source–drain contacts, which is particularly noticeable in P1. These p-type FETs, incorporating P1 and P2, were employed in complementary voltage inverter circuits along with thiazole-selenophene-linked fluorinated isoindigo (IID-TzSe) n-type organic FETs. The P1–IID-TzSe inverter, characterized by balanced p- and n-channels with similar threshold voltages, shows a gain >20 at a supply voltage of 50 V. Similar gains are also observed in the P2–IID-TzSe inverter circuits.
中文翻译：
用于场效应晶体管和互补电路的分子工程喹喔啉-吡啶基吡嗪聚合物
共轭聚合物的区域规整性在增强半导体性能和缩小光学带隙方面发挥着重要作用。合成并表征了两种供体-受体共聚物，特别是喹喔啉-噻吩乙烯撑 ( P1 ) 和区域规则吡啶基吡嗪-噻吩乙烯撑 ( P2 )。探讨了它们在有机场效应晶体管（FET）和互补逆变器电路中的潜在应用。与P1相比， P2表现出更窄的吸收光谱，具有明显的振动峰。在顶栅和底栅 FET 架构中，共聚物均表现出 p 型行为，其中P2 的载流子迁移率 (∼10 –3 cm 2 /(V s)) 比P1高大约一个数量级。通过源极-漏极接触的表面处理，FET 的性能得到进一步提高，这在P1中尤其明显。这些包含P1和P2的 p 型 FET 与噻唑-硒吩连接的氟化异靛蓝 (IID-TzSe) n 型有机 FET 一起用于互补电压逆变器电路。P1 –IID -TzSe 反相器的特点是具有相似阈值电压的平衡 p 通道和 n 通道，在 50 V 电源电压下显示出 >20 的增益。在 P2 –IID -TzSe 反相器电路中也观察到类似的增益。
更新日期：2024-02-16
中文翻译：
用于场效应晶体管和互补电路的分子工程喹喔啉-吡啶基吡嗪聚合物
共轭聚合物的区域规整性在增强半导体性能和缩小光学带隙方面发挥着重要作用。合成并表征了两种供体-受体共聚物，特别是喹喔啉-噻吩乙烯撑 ( P1 ) 和区域规则吡啶基吡嗪-噻吩乙烯撑 ( P2 )。探讨了它们在有机场效应晶体管（FET）和互补逆变器电路中的潜在应用。与P1相比， P2表现出更窄的吸收光谱，具有明显的振动峰。在顶栅和底栅 FET 架构中，共聚物均表现出 p 型行为，其中P2 的载流子迁移率 (∼10 –3 cm 2 /(V s)) 比P1高大约一个数量级。通过源极-漏极接触的表面处理，FET 的性能得到进一步提高，这在P1中尤其明显。这些包含P1和P2的 p 型 FET 与噻唑-硒吩连接的氟化异靛蓝 (IID-TzSe) n 型有机 FET 一起用于互补电压逆变器电路。P1 –IID -TzSe 反相器的特点是具有相似阈值电压的平衡 p 通道和 n 通道，在 50 V 电源电压下显示出 >20 的增益。在 P2 –IID -TzSe 反相器电路中也观察到类似的增益。
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