用于高效 p 型钝化隧道氧化物接触太阳能电池的 Al2O3/n-poly-Si/SiOx 叠层硅片的新型钝化和吸杂策略,Energy Technology

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用于高效 p 型钝化隧道氧化物接触太阳能电池的 Al2O3/n-poly-Si/SiOx 叠层硅片的新型钝化和吸杂策略
Energy Technology ( IF 3.6 ) Pub Date : 2024-02-13 , DOI: 10.1002/ente.202301031
Muhammad Quddamah Khokhar ₁ , Hasnain Yousuf ₂ , Mengmeng Chu ₂ , Youngkuk Kim ₃ , Minsung Jeon ₃ , Suresh Kumar Dhungel ₃ , Junsin Yi _{1,

2,

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Affiliation

本研究的重点是通过结合载流子选择性和钝化隧道氧化物接触 (TOPCon) 来增强硼掺杂 p 型太阳能级硅片的钝化和吸杂。采用氧化铝 (Al ₂ O ₃ )/p 掺杂 n 型多晶硅 (n-poly-Si)/超薄氧化硅 (SiO _x ) 的对称堆叠结合长周期的形成气体退火来增强硅通过新颖的方法提高晶圆质量。 p 型晶体硅片上的n-poly-Si/SiO _x多层显示出 726 mV 的隐含开路电压 ( iV _oc )、857 μs 的有效载流子寿命 ( τ _eff ) 和较低的复合电流密度 (当磷掺杂氢化非晶硅（na-Si:H）在820℃下进行沉积后退火（PDA）时，J _o）为1.9 fA cm ^{-2 。为了提高钝化和吸杂质量，在 n-poly-Si/SiO}_x样品的两侧添加了10 nm 厚的 Al ₂ O ₃层。这导致τ _eff (962 μs) 提高、Jo (1.1 fA cm ^{-2 ) 降低、}iV _oc₍ 728 mV)提高。在此，采用更薄的 50 nm n-poly-Si 层以改善性能。实验表明钝化和吸杂得到改善。 Quokka-3 模拟检验了高效 p 型 TOPCon 电池的潜力。引入了一种新颖的太阳能级 p 型晶圆质量增强方法，并与 Quokka-3 的结果相结合，这可能成为高效 p 型 TOPCon 太阳能电池生产的一个里程碑。

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Novel Passivation and Gettering Strategy for Silicon Wafer by Al2O3/n-poly-Si/SiOx Stack for High-Efficiency p-Type Passivating Tunnel Oxide Contact Solar Cells

This study focuses on the enhanced passivation and gettering of boron-doped p-type solar grade silicon wafers by incorporating carrier-selective and passivating tunnel oxide contact (TOPCon). A symmetrical stack of aluminum oxide (Al₂O₃)/p-doped n-type polysilicon (n-poly-Si)/ ultrathin silicon oxide (SiO_x) in conjunction with long cycles of forming gas annealing is used for enhancing the silicon wafer quality with a novel approach. Multilayer of n-poly-Si/SiO_x on p-type crystalline silicon wafer exhibits an implied open-circuit voltage (iV_oc) of 726 mV, effective carrier lifetime (τ_eff) of 857 μs, and a low recombination current density (J_o) of 1.9 fA cm⁻² when subjected to a postdeposition annealing (PDA) of phosphorus-doped hydrogenated amorphous silicon (n-a-Si:H) at 820 °C. To boost passivation and gettering quality, 10 nm-thick Al₂O₃ layers on both sides of n-poly-Si/SiO_x samples are added. This leads to improved τ_eff (962 μs), reduced J_o (1.1 fA cm⁻²), and higher iV_oc (728 mV). Herein, a thinner 50 nm n-poly-Si layer for improved properties is applied. The experiments show improved passivation and gettering. A Quokka-3 simulation examines the potential of high-efficiency p-type TOPCon cells. A novel solar-grade p-type wafer quality enhancement approach is introduced, amalgamated with Quokka-3 results, which could be a milestone in high-efficiency p-type TOPCon solar cell production.

更新日期：2024-02-13

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