Engineering Ferroelectric-/Ion-Modulated Conductance in 2D vdW CuInP2S6 for Non-Volatile Digital Memory and Artificial Synapse,Advanced Functional Materials

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Engineering Ferroelectric-/Ion-Modulated Conductance in 2D vdW CuInP2S6 for Non-Volatile Digital Memory and Artificial Synapse
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2024-02-15 , DOI: 10.1002/adfm.202316360
Wenjuan Ci ₁ , Peng Wang ₁ , Wuhong Xue ₁ , Hongtao Yuan ₂ , Xiaohong Xu ₁

Affiliation

Two-dimensional (2D) ferroionics is appealing in performing complex artificial intelligence tasks due to the interesting property of coexistence of ferroelectricity and ionic activities. CuInP₂S₆ (CIPS), as a typical 2D ferroionic material, is highly conducive to rich functions of information devices due to the displacement of Cu⁺ inducing both ferroelectricity and ionic conductivity. However, the coupling and modulation of polarization and ion migration in CIPS for multifunctional information devices has not been fully explored. Here, this study demonstrates that digital memory and synaptic simulations are realized in Au/CIPS/Au device via engineering ferroelectric polarization reversal and the long-distance migration of the Cu⁺ to change conductive modes. Steep resistive switching behavior based on ion-migration is observed with a high on/off ratio of over 10⁸, long retention time (>2 × 10⁴ s), and current compliance engineered multilevel resistance states, demonstrating reliable nonvolatile high-density memory characteristics. Based on the continuous modulation of polar order, the key synaptic behaviors are successfully simulated. Moreover, by the co-modulation of polarization state and ions migration, the paired-pulse facilitation, paired-pulse depression, and potentiation following depression are achieved. These results suggest that CIPS is a promising candidate for constructing high-performance, function-enriched devices for data storage, information processing, and neuromorphic computing.

中文翻译：

用于非易失性数字存储器和人工突触的 2D vdW CuInP2S6 中的铁电/离子调制电导工程

由于铁电性和离子活动共存的有趣特性，二维 (2D) 铁离子学在执行复杂的人工智能任务中颇具吸引力。 CuInP ₂ S ₆ (CIPS) 作为一种典型的二维铁离子材料，由于 Cu ⁺ 诱导的位移，非常有利于信息器件的丰富功能。兼有铁电性和离子电导率。然而，多功能信息器件CIPS中偏振和离子迁移的耦合和调制尚未得到充分探索。本研究表明，通过设计铁电极化反转和 Cu ⁺ 的长距离迁移来改变导电模式，可以在 Au/CIPS/Au 器件中实现数字记忆和突触模拟。观察到基于离子迁移的陡峭电阻开关行为，具有超过 10 ⁸ 的高开/关比、长保留时间 (>2 × 10 ⁴ s) 和电流合规性设计的多级电阻状态，展示了可靠的非易失性高密度存储器特性。基于极序的连续调制，成功模拟了关键的突触行为。此外，通过偏振态和离子迁移的共同调制，实现了成对脉冲促进、成对脉冲抑制和抑制后增强。这些结果表明，CIPS 是构建用于数据存储、信息处理和神经形态计算的高性能、功能丰富的设备的有前途的候选者。

更新日期：2024-02-15

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