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Formation of optical planar waveguides on fused quartz by MeV ion implantation
IET Optoelectronics ( IF 2.3 ) Pub Date : 2024-02-13 , DOI: 10.1049/ote2.12114 José‐Miguel Zarate‐Reyes 1 , Erick Flores‐Romero 2, 3 , Luis Rodríguez‐Fernández 2 , Yuriy Kudriavtsev 1 , Juan‐Carlos Cheang‐Wong 2
IET Optoelectronics ( IF 2.3 ) Pub Date : 2024-02-13 , DOI: 10.1049/ote2.12114 José‐Miguel Zarate‐Reyes 1 , Erick Flores‐Romero 2, 3 , Luis Rodríguez‐Fernández 2 , Yuriy Kudriavtsev 1 , Juan‐Carlos Cheang‐Wong 2
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The optical losses and the refractive index change of optical planar waveguides formed by MeV ion implantation were correlated with the experimental ion implantation parameters. Direct ion implantation was performed by means of carbon, silicon and copper ion beams impinging on the substrate surface at normal incidence. The ions were accelerated at energies ranging from 3 to 12 MeV with fluences varying from 1 × 1012 to 2 × 1016 ion/cm2, according to the type of implanted ion. The modification of the substrate refractive index due to the ion irradiation-induced damage was evaluated using the prism coupler method, and the refractive index profiles were determined by means of a reconstruction method using a multilayer structure approximation. The guiding properties of the waveguides were analysed using the fibre-coupling technique to determine both the optical transmission and transversal modes at 635 nm. The main practical relevance of our research is the obtention of high-quality waveguides at low current density MeV ion implantation (≤80 nA/cm2) without post-implantation annealing.
中文翻译：
通过 MeV 离子注入在熔融石英上形成光学平面波导
MeV离子注入形成的光学平面波导的光学损耗和折射率变化与实验离子注入参数相关。直接离子注入是通过碳、硅和铜离子束以法线入射照射到衬底表面来进行的。根据注入离子的类型，离子以3至12MeV的能量加速，注量从1×10 12至2×10 16 ion/cm 2变化。使用棱镜耦合器方法评估由于离子辐射引起的损伤而引起的基板折射率的改变，并通过使用多层结构近似的重建方法确定折射率分布。使用光纤耦合技术分析波导的引导特性，以确定 635 nm 处的光传输模式和横向模式。我们研究的主要实际意义是在低电流密度MeV离子注入（≤80 nA/cm 2 ）下获得高质量波导，而无需注入后退火。
更新日期：2024-02-13
中文翻译：
通过 MeV 离子注入在熔融石英上形成光学平面波导
MeV离子注入形成的光学平面波导的光学损耗和折射率变化与实验离子注入参数相关。直接离子注入是通过碳、硅和铜离子束以法线入射照射到衬底表面来进行的。根据注入离子的类型，离子以3至12MeV的能量加速，注量从1×10 12至2×10 16 ion/cm 2变化。使用棱镜耦合器方法评估由于离子辐射引起的损伤而引起的基板折射率的改变，并通过使用多层结构近似的重建方法确定折射率分布。使用光纤耦合技术分析波导的引导特性，以确定 635 nm 处的光传输模式和横向模式。我们研究的主要实际意义是在低电流密度MeV离子注入（≤80 nA/cm 2 ）下获得高质量波导，而无需注入后退火。
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