Doping of Large Ionization Potential Indenopyrazine Polymers via Lewis Acid Complexation with Tris(pentafluorophenyl)borane: A Simple Method for Improving the Performance of Organic Thin-Film Transistors,Chemistry of Materials

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Doping of Large Ionization Potential Indenopyrazine Polymers via Lewis Acid Complexation with Tris(pentafluorophenyl)borane: A Simple Method for Improving the Performance of Organic Thin-Film Transistors
Chemistry of Materials ( IF 7.2 ) Pub Date : 2016-10-18 00:00:00 , DOI: 10.1021/acs.chemmater.6b03761
Yang Han _{1,

2} , George Barnes ₁ , Yen-Hung Lin ₂ , Jaime Martin ₃ , Mohammed Al-Hashimi ₄ , Siham Y. AlQaradawi ₅ , Thomas D. Anthopoulos ₂ , Martin Heeney ₁

Affiliation

Molecular doping, under certain circumstances, can be used to improve the charge transport in organic semiconductors through the introduction of excess charge carriers which can in turn negate unwanted trap states often present in organic semiconductors. Here, two Lewis basic indenopyrazine copolymers with large ionization potential (5.78 and 5.82 eV) are prepared to investigate the p-doping efficiency with the Lewis acid dopant, tris(pentafluorophenyl)borane, using organic thin-film transistors (OTFTs). The formation of Lewis acid–base complex between the polymer and dopant molecules is confirmed via optical spectroscopy and electrical field-effect measurements, with the latter revealing a dopant-concentration-dependent device performance. By adjusting the amount of p-dopant, the hole mobility can be increased up to 11-fold while the OTFTs’ threshold voltages are reduced. The work demonstrates an alternative doping mechanism other than the traditional charge transfer model, where the energy level matching principle can limit the option of dopants.

中文翻译：

通过路易斯酸与三（五氟苯基）硼烷进行路易斯酸络合的大电离势茚并吡嗪聚合物：一种提高有机薄膜晶体管性能的简单方法

在某些情况下，分子掺杂可用于通过引入过量的电荷载流子来改善有机半导体中的电荷传输，而这些电荷载流子又可以消除有机半导体中经常存在的不想要的陷阱态。在这里，使用有机薄膜晶体管（OTFT），准备了两种具有大电离势（5.78和5.82 eV）的Lewis碱性茚并吡嗪共聚物，以研究路易斯酸掺杂剂三（五氟苯基）硼烷的p掺杂效率。聚合物和掺杂剂分子之间路易斯酸碱配合物的形成已通过光谱学和电场效应测量得到了证实，后者显示了掺杂剂浓度依赖性的器件性能。通过调整p型掺杂剂的量，空穴迁移率可以提高到11倍，而OTFT的阈值电压降低了。这项工作展示了一种不同于传统电荷转移模型的替代掺杂机制，在该机制中，能级匹配原理可能会限制掺杂剂的选择。

更新日期：2016-10-18

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