The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mechanism with new functionalities. Here, we report the observation of giant T-odd SHE in Fe₃GeTe₂/MoTe₂ van der Waals heterostructure, representing a previously unidentified interfacial magnetic spin Hall effect (interfacial-MSHE). Through rigorous symmetry analysis and theoretical calculations, we attribute the interfacial-MSHE to a symmetry-breaking induced spin current dipole at the vdW interface. Furthermore, we show that this linear effect can be used for implementing multiply-accumulate operations and binary convolutional neural networks with cascaded multi-terminal devices. Our findings uncover an interfacial T-odd charge-spin conversion mechanism with promising potential for energy-efficient in-memory computing.

自旋霍尔效应（SHE）可以通过充电电流有效地产生自旋极化或自旋电流，在自旋电子学的发展中发挥着至关重要的作用。虽然 SHE 通常发生在非磁性材料中并且是时间反转的，但探索奇时间反转 ( T -odd) SHE 将 SHE 与铁磁材料中的磁化耦合，提供了一种具有新功能的新电荷自旋转换机制。在这里，我们报告了在 Fe ₃ GeTe ₂ /MoTe ₂范德华异质结构中观察到的巨型T奇数 SHE，代表了先前未识别的界面磁自旋霍尔效应（界面-MSHE）。通过严格的对称性分析和理论计算，我们将界面-MSHE归因于vdW界面处对称破缺的诱导自旋流偶极子。此外，我们表明这种线性效应可用于实现乘法累加运算和具有级联多终端设备的二元卷积神经网络。我们的研究结果揭示了一种界面T奇数电荷自旋转换机制，在节能内存计算方面具有广阔的前景。