Abstract

The crystal structure of the 3R polytype with the lattice parameters а = 3.82 Å, с = 63.41 Å, sp. gr. R3m, and the TO\({{\bar {\text{T}}}}\)POOP structural type (T and \({{\bar {\text{T}}}}\) are oppositely oriented tetrahedral layers, O are octahedral layers, P are partially filled interpacket layers) has been established. Superstructures with superlattice period А_1,2 = \(\sqrt 7 \)а, formed as a result of occupation of 6/7 of each octahedron with indium in the OOP packet, and a superstructure with the superlattice period А₃ = 2а, formed by the distribution of 3/4 of In atoms and 1/4 vacancies over the octahedra included in the TO\({{\bar {\text{T}}}}\)P packet, are also established. It is shown that the different sulfur content in the samples leads to a different excess of cations in the octahedral layers of the TO\({{\bar {\text{T}}}}\)P packets and destruction of the superstructure.

中文翻译：

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缺硫对Ga1.29In3.38S7结构和超微结构特征的影响

摘要

3R 多型体的晶体结构，晶格参数а = 3.82 Å, с = 63.41 Å, sp。克。R 3 m，以及 TO \({{\bar {\text{T}}}}\) POOP 结构类型（T 和\({{\bar {\text{T}}}}\)方向相反四面体层，O 是八面体层，P 是部分填充的包间层）已经建立。具有超晶格周期А _1,2 = \(\sqrt 7 \) а 的上层结构，是由于 OOP 包中的铟占据每个八面体的 6/7 而形成的，以及具有超晶格周期А ₃ = 2 а的上层结构，由 TO \({{\bar {\text{T}}}}\) P 包中包含的八面体上 3/4 的 In 原子和 1/4 空位的分布形成。结果表明，样品中不同的硫含量导致 TO \({{\bar {\text{T}}}}\) P 包八面体层中的阳离子不同过量，并导致上部结构的破坏。