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Ultra-Broad-Band-Excitable Cu-Based Halide (C4H10N)4Cu4I8 with High Stability for LED Applications
Inorganic Chemistry ( IF 4.3 ) Pub Date : 2024-02-01 , DOI: 10.1021/acs.inorgchem.3c04318 Chuanying Shen 1 , Hanzhang Chen 1 , Longyun Xu 2 , Kui Wu 3 , Lingqiang Meng 4 , Shoubao Zhang 1 , Jiyang Wang 3 , Duanliang Wang 1
Inorganic Chemistry ( IF 4.3 ) Pub Date : 2024-02-01 , DOI: 10.1021/acs.inorgchem.3c04318 Chuanying Shen 1 , Hanzhang Chen 1 , Longyun Xu 2 , Kui Wu 3 , Lingqiang Meng 4 , Shoubao Zhang 1 , Jiyang Wang 3 , Duanliang Wang 1
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Currently, organic–inorganic hybrid cuprous-based halides are receiving substantial attention for their eco-friendliness, distinctive structures, and outstanding photophysical properties. Nevertheless, most of the reported cuprous-based halides demand deep ultraviolet excitation with a narrow excitation range that can meet the commercial requirement. Herein, zero-dimensional (0D) cuprous-based halide (C4H10N)4Cu4I8 single crystals (SCs) were synthesized, with an ultrabroad band excitation ranging 260–450 nm and a greenish-yellow emission band peaking at 560 nm. Excitingly, (C4H10N)4Cu4I8 also features a large Stokes shift of 300 nm, a high photoluminescence quantum yield (PLQY) of up to 84.66%, and a long lifetime of 137 μs. Furthermore, density functional theory calculations were performed to explore the relationship between structure and photophysical properties, and the photoluminescence performance of (C4H10N)4Cu4I8 originates from the electron interactions in [Cu2I4]2– clusters. Taking advantage of broad band excitation and excellent photoluminescent performances, a high luminescence characteristic UV-pumped light-emitting diode (LED) device with remarkable color stability was fabricated by employing the as-synthesized (C4H10N)4Cu4I8 SCs, which present the promising applications of low-dimensional cuprous-based halides in solid-state lighting.
中文翻译：
适用于 LED 应用的高稳定性超宽带可激发铜基卤化物 (C4H10N)4Cu4I8
目前，有机-无机杂化亚铜卤化物因其生态友好性、独特的结构和出色的光物理性能而受到广泛关注。然而，大多数报道的亚铜基卤化物需要具有窄激发范围的深紫外激发才能满足商业要求。在此，合成了零维（0D）亚铜基卤化物（C 4 H 10 N） 4 Cu 4 I 8单晶（SC），其超宽带激发范围为260-450 nm，发射带峰为黄绿色560 nm。令人兴奋的是，(C 4 H 10 N) 4 Cu 4 I 8还具有300 nm的大斯托克斯位移、高达84.66%的高光致发光量子产率（PLQY）和137 μs的长寿命。此外，还进行了密度泛函理论计算来探讨结构与光物理性质之间的关系，(C 4 H 10 N) 4 Cu 4 I 8的光致发光性能源于[Cu 2 I 4 ] 2–团簇中的电子相互作用。 。利用宽带激发和优异的光致发光性能，采用合成的(C 4 H 10 N) 4 Cu 4 I 8制备了具有显着颜色稳定性的高发光特性紫外泵浦发光二极管(LED)器件。 SC，展示了低维亚铜卤化物在固态照明中的有前景的应用。
更新日期：2024-02-01
中文翻译：
适用于 LED 应用的高稳定性超宽带可激发铜基卤化物 (C4H10N)4Cu4I8
目前，有机-无机杂化亚铜卤化物因其生态友好性、独特的结构和出色的光物理性能而受到广泛关注。然而，大多数报道的亚铜基卤化物需要具有窄激发范围的深紫外激发才能满足商业要求。在此，合成了零维（0D）亚铜基卤化物（C 4 H 10 N） 4 Cu 4 I 8单晶（SC），其超宽带激发范围为260-450 nm，发射带峰为黄绿色560 nm。令人兴奋的是，(C 4 H 10 N) 4 Cu 4 I 8还具有300 nm的大斯托克斯位移、高达84.66%的高光致发光量子产率（PLQY）和137 μs的长寿命。此外，还进行了密度泛函理论计算来探讨结构与光物理性质之间的关系，(C 4 H 10 N) 4 Cu 4 I 8的光致发光性能源于[Cu 2 I 4 ] 2–团簇中的电子相互作用。 。利用宽带激发和优异的光致发光性能，采用合成的(C 4 H 10 N) 4 Cu 4 I 8制备了具有显着颜色稳定性的高发光特性紫外泵浦发光二极管(LED)器件。 SC，展示了低维亚铜卤化物在固态照明中的有前景的应用。
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