Light-Mediated Multilevel Flexible High-Efficiency Perovskite Resistive Switching Memory Based on Mn:CsPbCl3 Nanocrystals,The Journal of Physical Chemistry Letters

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Light-Mediated Multilevel Flexible High-Efficiency Perovskite Resistive Switching Memory Based on Mn:CsPbCl3 Nanocrystals
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2024-02-01 , DOI: 10.1021/acs.jpclett.3c03455
Qian Ran ₁ , Yuchan Wang _{2,

3} , Wenxia Zhang ₁ , Nannan Xu ₁ , Weiwei Chen ₁ , Xiaosheng Tang ₁

Affiliation

Herein, the electrical characteristics, photoelectric properties, resistive switching (RS) mechanism, and flexible storage application of Ag/PMMA&Mn:CsPbCl₃/ITO (PMMA = poly(methyl methacrylate)) devices are studied by using the photoelectric material Mn:CsPbCl₃ nanocrystals (NCs) embedded in PMMA as the RS layer. The devices exhibit bipolar RS behavior with low operating voltage, excellent cycling endurance (>1000 times), long retention time (≥10⁴ s), high ON/OFF ratio (≈10⁴), and good environmental stability. The flexible memory devices have demonstrated reliable mechanical stability of consecutive 1000 bending cycles. In addition, multilevel data storage is realized by introducing the UV light, and the adjustive resistive switching characteristics is achieved through photoelectric synergistic work. The resistive switching mechanism under the excitation of light has been studied comprehensively. This work may pave a new way for developing the next generation of high-density data storage and photoelectric memristor.

中文翻译：

基于Mn:CsPbCl3纳米晶的光介导多级柔性高效钙钛矿阻变存储器

本文利用Mn:CsPbCl 3 光电材料，研究了Ag/PMMA&Mn:CsPbCl ₃ /ITO（PMMA=聚甲基丙烯酸甲酯）器件的电学特性、光电性能、阻变（RS）机理和柔性存储应用_。纳米晶体 (NC) 嵌入 PMMA 作为 RS 层。该器件表现出双极RS行为，具有低工作电压、优异的循环耐久性（>1000次）、长保留时间（≥10 ⁴ s）、高开/关比（≈10 ⁴ ）和良好的环境稳定性。柔性存储器件在连续 1000 次弯曲循环中表现出可靠的机械稳定性。另外，通过引入紫外光实现多级数据存储，并通过光电协同工作实现可调阻变特性。对光激发下的阻变机理进行了全面的研究。这项工作可能为开发下一代高密度数据存储和光电忆阻器开辟新途径。

更新日期：2024-02-01

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