Emerging Opportunities for Ferroelectric Field-Effect Transistors: Integration of 2D Materials,Advanced Functional Materials

当前位置： X-MOL 学术 › Adv. Funct. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Emerging Opportunities for Ferroelectric Field-Effect Transistors: Integration of 2D Materials
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2024-02-01 , DOI: 10.1002/adfm.202310438
Fang Yang _{1,

2,

3,

4} , Hong Kuan Ng ₃ , Xin Ju ₃ , Weifan Cai ₃ , Jing Cao ₃ , Dongzhi Chi ₃ , Ady Suwardi _{3,

5} , Guangwei Hu ₆ , Zhenhua Ni ₂ , Xiao Renshaw Wang _{4,

6} , Junpeng Lu ₂ , Jing Wu _{3,

5}

Affiliation

The rapid development in information technologies necessitates rapid advancements of their supporting hardware. In particular, new computing paradigms are needed to overcome the bottleneck of traditional von Neumann architecture. Bottom-up innovation, especially at the materials and devices level, has the potential to disrupt existing technologies through their emergent phenomena. As a new type of conceptual device, 2D ferroelectric field-effect transistor (FeFET) is highly sought after due to its potential integration with modern semiconductor processes. Its low power consumption, area efficiency, and ultra-fast operation provide an extra edge over traditional technologies. This review highlights recent developments in 2D FeFET, covering their device construction, working mechanisms, 2D ferroelectric polarization mechanism, multi-functional applications and prospects. In particular, the combination of 2D semiconductor and ferroelectric dielectric materials for multi-functionality applications is discussed. This includes non-volatile memories (NVM), neural network computing, non-volatile logic operation, and photodetectors. As a novel device platform, 2D semiconductor and ferroelectric interfaces are bestowed with a plethora of emergent physical mechanisms and applications.

中文翻译：

铁电场效应晶体管的新兴机遇：二维材料的集成

信息技术的快速发展要求其支撑硬件的快速进步。特别是需要新的计算范式来克服传统冯诺依曼架构的瓶颈。自下而上的创新，特别是在材料和设备层面，有可能通过其新兴现象颠覆现有技术。作为一种新型概念器件，二维铁电场效应晶体管（FeFET）由于其与现代半导体工艺集成的潜力而备受追捧。与传统技术相比，其低功耗、面积效率和超快运行具有额外的优势。本综述重点介绍了 2D FeFET 的最新进展，涵盖其器件结构、工作机制、2D 铁电极化机制、多功能应用和前景。特别是，讨论了用于多功能应用的二维半导体和铁电介电材料的组合。这包括非易失性存储器 (NVM)、神经网络计算、非易失性逻辑运算和光电探测器。作为一种新颖的器件平台，二维半导体和铁电接口被赋予了大量的新兴物理机制和应用。

更新日期：2024-02-01

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南