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Site-selective occupancy of Cr3+ enabling tunable emission from near infrared I to II in fluoride LiInF4:Cr3+
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2024-01-31 , DOI: 10.1039/d3tc04251k
H. Chang 1 , F. Q. He 1 , E. H. Song 1 , Q. Y. Zhang 1, 2
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2024-01-31 , DOI: 10.1039/d3tc04251k
H. Chang 1 , F. Q. He 1 , E. H. Song 1 , Q. Y. Zhang 1, 2
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Broadband near-infrared (NIR) phosphors are crucial for fabrication of next-generation smart light sources; however, the development of a broadband NIR II emission phosphor with the full width at half maximum (FWHM) above 200 nm remains challenging. Herein, a Cr3+ doped fluoride phosphor LiInF4:Cr3+ with tunable emission from the NIR I to the NIR II spectral region is achieved using a site-occupancy control strategy. By changing the volume ratio of HF to H2O in the synthesized solution, nearly pure NIR I emission at ∼818 nm to NIR II emission centered at ∼1000 nm with a FWHM of 220 nm is realized. The density functional theory (DFT) calculations and experimental analysis reveal that the NIR I and NIR II emissions originated from the Cr3+ ions at In3+ and Li+ sites in this fluoride, which are coordinated with six and seven F− ions, respectively. The relatively low local symmetry environment is the main factor for the NIR II emission of Cr3+. A phosphor converted light-emitting diode with broadband NIR II emission is fabricated by combining the phosphor LiInF4:Cr3+ and a commercial 460 nm blue InGaN chip, showing good potential for non-destructive detection, vein imaging, etc. This work also provides insights into the luminescence tuning of Cr3+ ions.
中文翻译：
Cr3+ 的位点选择性占据使得氟化物 LiInF4:Cr3+ 中的近红外 I 到 II 的可调发射
宽带近红外 (NIR) 荧光粉对于制造下一代智能光源至关重要；然而，开发半峰全宽 (FWHM) 高于 200 nm 的宽带 NIR II 发射荧光粉仍然具有挑战性。在此，使用位点占用控制策略实现了具有从NIR I到NIR II光谱区域可调谐发射的Cr 3+掺杂氟化物磷光体LiInF 4 :Cr 3+ 。通过改变合成溶液中HF与H 2 O的体积比，实现了~818 nm处近乎纯的NIR I发射到以~1000 nm为中心、半峰宽为220 nm的NIR II发射。密度泛函理论（DFT）计算和实验分析表明，NIR I和NIR II发射源自该氟化物中In 3+和Li +位点的Cr 3+离子，它们与六个和七个F -离子配位，分别。相对较低的局部对称性环境是Cr 3+的NIR II发射的主要因素。通过将LiInF 4 :Cr 3+荧光粉与商用460 nm蓝色InGaN芯片相结合，制备了具有宽带NIR II发射的荧光粉转换发光二极管，在无损检测、静脉成像等方面显示出良好的潜力。提供了对 Cr 3+离子的发光调谐的见解。
更新日期：2024-01-31
中文翻译：
Cr3+ 的位点选择性占据使得氟化物 LiInF4:Cr3+ 中的近红外 I 到 II 的可调发射
宽带近红外 (NIR) 荧光粉对于制造下一代智能光源至关重要；然而，开发半峰全宽 (FWHM) 高于 200 nm 的宽带 NIR II 发射荧光粉仍然具有挑战性。在此，使用位点占用控制策略实现了具有从NIR I到NIR II光谱区域可调谐发射的Cr 3+掺杂氟化物磷光体LiInF 4 :Cr 3+ 。通过改变合成溶液中HF与H 2 O的体积比，实现了~818 nm处近乎纯的NIR I发射到以~1000 nm为中心、半峰宽为220 nm的NIR II发射。密度泛函理论（DFT）计算和实验分析表明，NIR I和NIR II发射源自该氟化物中In 3+和Li +位点的Cr 3+离子，它们与六个和七个F -离子配位，分别。相对较低的局部对称性环境是Cr 3+的NIR II发射的主要因素。通过将LiInF 4 :Cr 3+荧光粉与商用460 nm蓝色InGaN芯片相结合，制备了具有宽带NIR II发射的荧光粉转换发光二极管，在无损检测、静脉成像等方面显示出良好的潜力。提供了对 Cr 3+离子的发光调谐的见解。
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