用于下一代非易失性存储器件的具有增强磁矩的 As 取代双层 α-In2Se3 中的二维多铁性材料,Advanced Electronic Materials

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用于下一代非易失性存储器件的具有增强磁矩的 As 取代双层 α-In2Se3 中的二维多铁性材料
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2024-01-23 , DOI: 10.1002/aelm.202300642
Zhikuan Wang ₁ , Ge Xu ₁ , Xinxin Jiang ₁ , Lei Yang ₁ , Quan Gao ₁ , Chong Li ₂ , Dongmei Li ₁ , Desheng Liu _{1,

3} , Bin Cui ₁

Affiliation

寻找具有铁磁（FM）和铁电（FE）特性的多铁性材料有望实现超高密度和低能耗存储器件应用，但同时具有这两种特性的二维材料却很少见。在此，提出了通过空穴掺杂实现双层（BL） α -In ₂ Se ₃中磁性的非易失性电场控制的一般策略。通过第一性原理计算，证明空穴掺杂由于其独特的扁平墨西哥帽形价带结构，可以在双层α -In ₂ Se ₃中诱导出强大的铁磁性。这种能带边缘会导致范霍夫奇点（VHS），而适当的空穴掺杂会导致时间反转对称性破缺。双层α -In ₂ Se ₃在很宽的掺杂浓度范围内表现出铁磁性和铁电性，从而产生意想不到的多铁相。此外，当α -In ₂ Se ₃的电极化从下到上翻转时，As-取代双层α -In ₂ Se ₃中的铁磁态变为非磁性（NM），可以作为非易失性磁性材料。存储单元。值得注意的是，由于界面上大量的电荷转移，As 取代的双层α -In ₂ Se ₃表现出每 As _{Se 1.2}_μB的增强磁矩。值得注意的是，电控磁性的机制被阐明为墨西哥帽色散、铁磁性和铁电性之间的耦合。这些发现为电写入和磁读取存储设备提供了一种有前景的策略。

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2D Multiferroics in As-Substituted Bilayer α-In2Se3 with Enhanced Magnetic Moments for Next-Generation Nonvolatile Memory Device

Searching for multiferroic materials with ferromagnetic (FM) and ferroelectric (FE) properties holds promise for ultra-high-density and low-energy-consumption memory device applications, but 2D materials with both properties are rare. Herein, a general strategy to achieve nonvolatile electric field control of magnetism in the bilayer (BL) α-In₂Se₃ by hole doping is proposed. By first-principles calculations, it is demonstrated that hole doping can induce robust ferromagnetism in the bilayer α-In₂Se₃ due to its unique flat Mexican-hat-shape valence band structure. Such band edges cause van Hove singularities (VHS), and proper hole doping can lead to time-reversal symmetry breaking. The bilayer α-In₂Se₃ exhibits ferromagnetism and ferroelectricity within a wide range of doping concentrations, resulting in an unexpected multiferroic phase. Furthermore, when the electrical polarization of α-In₂Se₃ flips from downward to upward, it becomes non-magnetic (NM) from ferromagnetic states in the As-substituted bilayer α-In₂Se₃, which can work as a nonvolatile magnetic storage unit. Remarkably, the As-substituted bilayer α-In₂Se₃ exhibits an enhanced magnetic moment of 1.2 μ_B per As_Se due to substantial charge transfer across the interface. Notably, the mechanism of electrically controlled magnetism is elucidated as the coupling among the Mexican-hat-like dispersion, ferromagnetism, and ferroelectricity. The findings offer a promising strategy for electrical writing and the magnetic reading memory device.

更新日期：2024-01-23

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