The exploration of metal–insulator transitions to produce field-induced reversible resistive switching effects has been a longstanding pursuit in materials science. Although the resistive switching effect in strongly correlated oxides is often associated with the creation or annihilation of oxygen vacancies, the underlying mechanisms behind this phenomenon are complex and, in many cases, still not clear. This study focuses on the analysis of the superconducting performance of cuprate YBa₂Cu₃O_7−δ (YBCO) devices switched to different resistive states through gate voltage pulses. The goal is to evaluate the effect of field-induced oxygen diffusion on the magnetic field and angular dependence of the critical current density and identify the role of induced defects in the switching performance. Transition electron microscopy measurements indicate that field-induced transition to high resistance states occurs through the generation of YBa₂Cu₄O₇ (Y124) intergrowths with a large amount of oxygen vacancies, in agreement with the obtained critical current density dependences. These results have significant implications for better understanding the mechanisms of field-induced oxygen doping in cuprate superconductors and their role on the superconducting performance.

探索金属-绝缘体转变以产生场感应可逆电阻开关效应一直是材料科学领域的长期追求。尽管强相关氧化物中的电阻开关效应通常与氧空位的产生或消除有关，但这种现象背后的潜在机制很复杂，在许多情况下仍不清楚。本研究的重点是分析通过栅极电压脉冲切换到不同电阻状态的铜酸盐 YBa₂Cu₃O_7−δ （YBCO） 器件的超导性能。目标是评估场感应氧扩散对磁场和临界电流密度的角度依赖性的影响，并确定感应缺陷在开关性能中的作用。过渡电子显微镜测量表明，场诱导向高电阻状态的转变是通过产生具有大量氧空位的 YBa₂Cu₄O₇ （Y124） 共生发生的，这与获得的临界电流密度依赖性一致。这些结果对于更好地理解铜酸盐超导体中场诱导氧掺杂的机制及其对超导性能的作用具有重要意义。