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Aluminum and Gallium Substitution in Yttrium and Lutetium Aluminum–Gallium Garnets: Investigation by Single-Crystal NMR and TSL Methods
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2016-10-17 00:00:00 , DOI: 10.1021/acs.jpcc.6b08593 Valentin Laguta 1, 2 , Yuriy Zorenko 3, 4 , Vitaliy Gorbenko 3, 4 , Ayzhan Iskaliyeva 3 , Yuriy Zagorodniy 5 , Oleg Sidletskiy 6 , Paweł Bilski 7 , Anna Twardak 7 , Martin Nikl 1
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2016-10-17 00:00:00 , DOI: 10.1021/acs.jpcc.6b08593 Valentin Laguta 1, 2 , Yuriy Zorenko 3, 4 , Vitaliy Gorbenko 3, 4 , Ayzhan Iskaliyeva 3 , Yuriy Zagorodniy 5 , Oleg Sidletskiy 6 , Paweł Bilski 7 , Anna Twardak 7 , Martin Nikl 1
Affiliation
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The work reports the results on 71Ga and 27Al NMR investigation of the gallium and aluminum ions distribution over tetrahedral and octahedral positions in the Y3Al5–x GaxO12:Ce single crystals and Lu3Al5–xGaxO12:Ce single-crystalline epitaxial films. The gallium content x varies between 0 and 5 in crystals and between 0.3 and 2 in films.. We find that in both the Y- and Lu-based solid solutions the larger gallium ions are preferably located at the tetrahedral position while the smaller aluminum ions prefer the octahedral position of the garnet host. Based on NMR data, the dependence of fractional occupation parameters of the tetrahedral site of Ga and Al ions on the Ga content is determined. In particular, in the Y3Al2Ga3O12:Ce crystal only 28% of Ga ions occupy octahedral sites, whereas 72% occupy tetrahedral ones. NMR investigations suggest that observed nonmonotonic dependences of electron trap depths monitored by thermally stimulated luminescence of Y3Al5–xGaxO12:Ce complex garnets on the Ga content are related to preferential localization of the Ga and Al ions over the tetrahedral and octahedral positions of the garnet lattice, respectively. Our data confirm that the tetrahedral site preference (over the octahedral site) for the Ga occupation is an intrinsic property of the mixed Y3(Lu3)Al5–xGaxO12 garnets.
中文翻译：
钇和L铝-镓石榴石中的铝和镓替代：单晶NMR和TSL方法研究
这项工作报告了71 Ga和27 Al NMR研究Y 3 Al 5– x Ga x O 12：Ce单晶和Lu 3 Al 5– x Ga x四面体和八面体位置上的镓和铝离子分布的结果。O 12：Ce单晶外延膜。镓含量x在晶体中0到5之间变化，在薄膜中在0.3到2之间变化。我们发现，在Y和Lu基固溶体中，较大的镓离子最好位于四面体位置，而较小的铝离子更喜欢八面体位置石榴石主机。基于NMR数据，确定了Ga和Al离子的四面体部位的分数占据参数对Ga含量的依赖性。特别地，在Y 3 Al 2 Ga 3 O 12：Ce晶体中，仅28％的Ga离子占据八面体位点，而72％的占据四面体位点。NMR研究表明，通过热激发的Y 3 Al 5–Ga含量上的x Ga x O 12：Ce复合石榴石分别与Ga和Al离子在石榴石晶格的四面体和八面体位置上的优先定位有关。我们的数据证实，Ga占据的四面体位点（相对于八面体位点）是混合的Y 3（Lu 3）Al 5– x Ga x O 12石榴石的固有特性。
更新日期：2016-10-17
中文翻译：
钇和L铝-镓石榴石中的铝和镓替代：单晶NMR和TSL方法研究
这项工作报告了71 Ga和27 Al NMR研究Y 3 Al 5– x Ga x O 12：Ce单晶和Lu 3 Al 5– x Ga x四面体和八面体位置上的镓和铝离子分布的结果。O 12：Ce单晶外延膜。镓含量x在晶体中0到5之间变化，在薄膜中在0.3到2之间变化。我们发现，在Y和Lu基固溶体中，较大的镓离子最好位于四面体位置，而较小的铝离子更喜欢八面体位置石榴石主机。基于NMR数据，确定了Ga和Al离子的四面体部位的分数占据参数对Ga含量的依赖性。特别地，在Y 3 Al 2 Ga 3 O 12：Ce晶体中，仅28％的Ga离子占据八面体位点，而72％的占据四面体位点。NMR研究表明，通过热激发的Y 3 Al 5–Ga含量上的x Ga x O 12：Ce复合石榴石分别与Ga和Al离子在石榴石晶格的四面体和八面体位置上的优先定位有关。我们的数据证实，Ga占据的四面体位点（相对于八面体位点）是混合的Y 3（Lu 3）Al 5– x Ga x O 12石榴石的固有特性。
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