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Simultaneous Interfacial Defect Passivation and Bottom-Up Excess PbI2 Management via Rubidium Chloride in Highly Efficient Perovskite Solar Cells with Suppressed Hysteresis
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2024-01-22 , DOI: 10.1021/acsami.3c17743
Hanyu Wang 1 , Hu Luo 1 , Lang Yang 1 , Xingchong Liu 1 , Haimin Li 1 , Shuqian Liu 1 , Yanling Tang 1 , Zongbiao Ye 2 , Wei Long 3
Affiliation  

In halide perovskite solar cells (PSCs), moderate lead iodide (PbI2) can enhance device efficiency by providing some passivation effects, but extremely active PbI2 leads to the current density–voltage hysteresis effect and device instability. In addition, defects distributed on the buried interface of tin oxide (SnO2)/perovskite will lead to the photogenerated carrier recombination. Here, rubidium chloride (RbCl) is introduced at the buried SnO2/perovskite interface, which not only acts as an interfacial passivator to interact with the uncoordinated tin ions (Sn4+) and fill the oxygen vacancy on the SnO2 surface but also converts PbI2 into an inactive (PbI2)2RbCl compound to stabilize the perovskite phase via a bottom-up evolution effect. These synergistic effects deliver a champion PCE of 22.13% with suppressed hysteresis for the W RbCl PSCs, in combination with enhanced environmental and thermal stability. This work demonstrates that the interfacial defect passivation and bottom-up excess PbI2 management using RbCl modifiers are promising strategies to address the outstanding challenges associated with PSCs.

中文翻译:


通过氯化铷在抑制磁滞的高效钙钛矿太阳能电池中同时进行界面缺陷钝化和自下而上的过量 PbI2 管理



在卤化物钙钛矿太阳能电池(PSC)中,适量的碘化铅(PbI 2 )可以通过提供一些钝化效应来提高器件效率,但极其活跃的PbI 2会导致电流密度-电压滞后效应和器件不稳定。此外,分布在氧化锡(SnO 2 )/钙钛矿埋入界面上的缺陷将导致光生载流子复合。这里,在掩埋的SnO 2 /钙钛矿界面处引入氯化铷(RbCl),它不仅充当界面钝化剂,与不配位的锡离子(Sn 4+ )相互作用并填充SnO 2表面上的氧空位,而且还将PbI 2转化为不活泼的(PbI 2 ) 2 RbCl化合物,通过自下而上的演化效应稳定钙钛矿相。这些协同效应使 W RbCl PSC 的 PCE 达到 22.13%,抑制滞后,同时增强环境和热稳定性。这项工作表明,使用 RbCl 改性剂进行界面缺陷钝化和自下而上的过量 PbI 2管理是解决与 PSC 相关的突出挑战的有前景的策略。
更新日期:2024-01-22
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