Graphene‐β‐Ga2O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application,Advanced Materials

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Graphene‐β‐Ga2O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application
Advanced Materials ( IF 27.4 ) Pub Date : 2016-10-17 , DOI: 10.1002/adma.201604049
Wei-Yu Kong ₁ , Guo-An Wu ₁ , Kui-Yuan Wang ₁ , Teng-Fei Zhang ₁ , Yi-Feng Zou ₁ , Dan-Dan Wang ₁ , Lin-Bao Luo ₁

Affiliation

A deep UV light photodetector is assembled by coating multilayer graphene on beta‐gallium oxide (β‐Ga₂O₃) wafer. Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility.