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High-Throughput Exploration of Phase Evolution in (Pb1−XBaX)ZrO3 Thin Films
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2024-01-12 , DOI: 10.1002/aelm.202300746
Peipei Su 1, 2 , Chuanlai Ren 2 , Lingping Zeng 1, 2 , Feng An 2 , Minghuan Li 1 , Qianxin Chen 1, 2 , Yuan Zhang 2 , Yangchun Tan 1, 2 , Jinbin Wang 1 , Xiangli Zhong 1 , Mingqiang Huang 2 , Gaokuo Zhong 2
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2024-01-12 , DOI: 10.1002/aelm.202300746
Peipei Su 1, 2 , Chuanlai Ren 2 , Lingping Zeng 1, 2 , Feng An 2 , Minghuan Li 1 , Qianxin Chen 1, 2 , Yuan Zhang 2 , Yangchun Tan 1, 2 , Jinbin Wang 1 , Xiangli Zhong 1 , Mingqiang Huang 2 , Gaokuo Zhong 2
Affiliation
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Antiferroelectric thin films hold significant potential for bringing novel physics phenomena and fascinating properties. Their applications are often intertwined with the antiferroelectric-ferroelectric phase transition, which is contingent on the chemical compositions of the constituent material. Nevertheless, the prevailing trial-and-error-based research methodology is ill-suited for the exploration of the relationship between chemical compositions and the antiferroelectric-ferroelectric phase transition. To address this challenge, a high-throughput synthesis strategy for antiferroelectric thin films is presented, which is enabled by an advanced high-throughput pulsed laser deposition technology. The effectiveness of this synthesis strategy using (Pb1−XBaX)ZrO3 and achieving precise control over the parameter X is showcased. This approach allows for the deposition of (Pb1−XBaX)ZrO3 thin films encompassing nine chemical compositions ranging from X = 0 to X = 0.08. Based on this high-throughput method, the composition that corresponds to the phase transition of (Pb1−XBaX)ZrO3, falling within the range of X = 0.04 to X = 0.06 is pinpointed. Furthermore, a temperature-dependent correlation between the phase transition and chemical composition is established. This work not only presents a practical routine for establishing a comprehensive map of material chemical composition in relation to the properties of antiferroelectric thin films but also offers a method for the high-throughput exploration of complex oxide thin films.
中文翻译：
(Pb1−XBaX)ZrO3 薄膜中相演化的高通量探索
反铁电薄膜在带来新颖的物理现象和令人着迷的特性方面具有巨大的潜力。它们的应用通常与反铁电-铁电相变交织在一起，这取决于组成材料的化学成分。然而，流行的基于试错的研究方法并不适合探索化学成分与反铁电-铁电相变之间的关系。为了应对这一挑战，提出了一种反铁电薄膜的高通量合成策略，该策略是通过先进的高通量脉冲激光沉积技术实现的。展示了使用 (Pb 1−X Ba X )ZrO 3的合成策略的有效性并实现了对参数 X 的精确控制。该方法允许沉积包含从X=0到X=0.08的九种化学成分的(Pb 1−X Ba X )ZrO 3薄膜。基于该高通量方法，确定了与落入X=0.04至X=0.06范围内的(Pb 1−X Ba X )ZrO 3的相变相对应的组成。此外，还建立了相变和化学成分之间依赖于温度的相关性。这项工作不仅提出了建立与反铁电薄膜性能相关的材料化学成分综合图的实用程序，而且还提供了复杂氧化物薄膜的高通量探索方法。
更新日期：2024-01-12
中文翻译：
(Pb1−XBaX)ZrO3 薄膜中相演化的高通量探索
反铁电薄膜在带来新颖的物理现象和令人着迷的特性方面具有巨大的潜力。它们的应用通常与反铁电-铁电相变交织在一起，这取决于组成材料的化学成分。然而，流行的基于试错的研究方法并不适合探索化学成分与反铁电-铁电相变之间的关系。为了应对这一挑战，提出了一种反铁电薄膜的高通量合成策略，该策略是通过先进的高通量脉冲激光沉积技术实现的。展示了使用 (Pb 1−X Ba X )ZrO 3的合成策略的有效性并实现了对参数 X 的精确控制。该方法允许沉积包含从X=0到X=0.08的九种化学成分的(Pb 1−X Ba X )ZrO 3薄膜。基于该高通量方法，确定了与落入X=0.04至X=0.06范围内的(Pb 1−X Ba X )ZrO 3的相变相对应的组成。此外，还建立了相变和化学成分之间依赖于温度的相关性。这项工作不仅提出了建立与反铁电薄膜性能相关的材料化学成分综合图的实用程序，而且还提供了复杂氧化物薄膜的高通量探索方法。
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