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Current Remedy in Ultrathin Crystalline Si Solar Cell by Cu2SnS3 Thin Film toward High Efficiency
Energy Technology ( IF 3.6 ) Pub Date : 2024-01-08 , DOI: 10.1002/ente.202301329 Bipanko Kumar Mondal 1 , Ahnaf Tahmid Abir 2 , Jaker Hossain 2
Energy Technology ( IF 3.6 ) Pub Date : 2024-01-08 , DOI: 10.1002/ente.202301329 Bipanko Kumar Mondal 1 , Ahnaf Tahmid Abir 2 , Jaker Hossain 2
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An ultrathin 15 μm wafer-based c-Si solar cell is designed and simulated, wherein the current remedy is done by Cu2SnS3 (CTS) thin film. The ZnSe and AlSb are incorporated as window and back surface field (BSF) layers, respectively, in this model. The ultrathin Si-based n-ZnSe/p-Si exhibits the short-circuit current density of 30.66 mA cm−2 with an efficiency of 18.80%. The inclusion of p+-CTS thin film as a second absorber layer has enhanced this current to 42.14 mA cm−2. By absorbing sunlight up to 1200 nm, the CTS layer is able to successfully overcome the constraint of thinner Si wafers on longer-wavelength photon absorption leading to current augmentation. The addition of p++-AlSb as the BSF layer also boosts the open-circuit voltage by 300 mV. The rise in VOC is a result of the larger built-in potential in ZnSe/Si, Si/CTS, and CTS/AlSb interfaces. With enriched current and voltage, the final proposed n-ZnSe/p-Si/p+-CTS/p++-AlSb heterostructure theoretically records an efficiency of 35.48% in ultrathin Si solar cells. The current compensation obtained using CTS thin film in this work can give optimism about the future of ultrathin Si solar cells.
中文翻译：
目前通过 Cu2SnS3 薄膜实现超薄晶体硅太阳能电池高效率的补救措施
设计并模拟了超薄15 μm晶圆基c-Si太阳能电池，其中当前的补救措施是通过Cu 2 SnS 3 (CTS)薄膜来完成。在此模型中，ZnSe 和 AlSb 分别作为窗口层和背表面场 (BSF) 层。超薄硅基n-ZnSe/p-Si的短路电流密度为30.66 mA cm -2，效率为18.80%。包含p + -CTS薄膜作为第二吸收层已将该电流增强至42.14 mA cm -2。通过吸收高达 1200 nm 的太阳光，CTS 层能够成功克服更薄的硅片对更长波长光子吸收的限制，从而导致电流增强。添加 p ++ -AlSb 作为 BSF 层也将开路电压提高了 300 mV。V OC的上升是由于 ZnSe/Si、Si/CTS 和 CTS/AlSb 界面中较大的内置电势所致。在丰富的电流和电压下，最终提出的n-ZnSe/p-Si/p + -CTS/p ++ -AlSb异质结构理论上在超薄硅太阳能电池中的效率为35.48%。这项工作中使用 CTS 薄膜获得的电流补偿可以让人们对超薄硅太阳能电池的未来感到乐观。
更新日期：2024-01-08
中文翻译：
目前通过 Cu2SnS3 薄膜实现超薄晶体硅太阳能电池高效率的补救措施
设计并模拟了超薄15 μm晶圆基c-Si太阳能电池，其中当前的补救措施是通过Cu 2 SnS 3 (CTS)薄膜来完成。在此模型中，ZnSe 和 AlSb 分别作为窗口层和背表面场 (BSF) 层。超薄硅基n-ZnSe/p-Si的短路电流密度为30.66 mA cm -2，效率为18.80%。包含p + -CTS薄膜作为第二吸收层已将该电流增强至42.14 mA cm -2。通过吸收高达 1200 nm 的太阳光，CTS 层能够成功克服更薄的硅片对更长波长光子吸收的限制，从而导致电流增强。添加 p ++ -AlSb 作为 BSF 层也将开路电压提高了 300 mV。V OC的上升是由于 ZnSe/Si、Si/CTS 和 CTS/AlSb 界面中较大的内置电势所致。在丰富的电流和电压下，最终提出的n-ZnSe/p-Si/p + -CTS/p ++ -AlSb异质结构理论上在超薄硅太阳能电池中的效率为35.48%。这项工作中使用 CTS 薄膜获得的电流补偿可以让人们对超薄硅太阳能电池的未来感到乐观。
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