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Awakening the Dumb Site to Realize Ultra-Broadband NIR Phosphor
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2024-01-08 , DOI: 10.1002/lpor.202301226
Lipeng Jiang 1 , Liangliang Zhang 2 , Xinpeng Zhao 1 , Xue Jiang 3 , Panpan Gao 4 , Yanjing Su 1
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2024-01-08 , DOI: 10.1002/lpor.202301226
Lipeng Jiang 1 , Liangliang Zhang 2 , Xinpeng Zhao 1 , Xue Jiang 3 , Panpan Gao 4 , Yanjing Su 1
Affiliation
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Near-infrared (NIR) light sources have gained immense popularity in recent years due to their wide range of applications in various fields, including spectroscopy and biomedical imaging. However, the limited emission bandwidth of NIR phosphors is a significant bottleneck in their development. Here, a novel strategy is reported to broaden the emission bandwidth of NIR phosphors by awakening the dumb site. Na4M3Ta(PO4)6: Cr3+ (M = Al3+, Ga3+, In3+) phosphor is synthesized, which exhibits a greatly broadened bandwidth from 134 to 232 nm. Structural and spectral analysis reveals that the NaO6 octahedral site has a severe t2g-type distortion, making it a dumb site for Cr3+. By introducing larger In3+ at the M site, the angular distortion at the NaO6 site decreases to the normal range, enabling the luminescence of Cr3+ again. Along with the broadened bandwidth, the emission peak also redshifts from 802 to 977 nm, giving advantages in NIR spectroscopy applications. Interestingly, the awakened luminescence at the NaO6 site shows even better luminescence properties than the original M/TaO6 octahedral site. These findings reveal a novel insight into the luminescence of Cr3+ at the octahedral site, which could potentially revolutionize the design of NIR phosphors.
中文翻译：
唤醒哑地，实现超宽带近红外荧光粉
近年来，近红外（NIR）光源因其在光谱学和生物医学成像等各个领域的广泛应用而受到广泛欢迎。然而，近红外荧光粉的发射带宽有限是其发展的一个重大瓶颈。在这里，报道了一种新策略，通过唤醒哑位点来拓宽近红外荧光粉的发射带宽。合成了Na 4 M 3 Ta(PO 4 ) 6 : Cr 3+ ( M =Al 3+ , Ga 3+ , In 3+ )荧光粉，其带宽从134 nm到232 nm大大拓宽。结构和光谱分析表明NaO 6八面体位点具有严重的t 2g型畸变，使其成为Cr 3+的哑位点。通过在M位点引入较大的In 3+ ，NaO 6位点的角度畸变减小到正常范围，使得Cr 3+再次发光。随着带宽的加宽，发射峰也从 802 nm 红移至 977 nm，从而在近红外光谱应用中具有优势。有趣的是，NaO 6位点的唤醒发光表现出比原始M/TaO 6八面体位点更好的发光特性。这些发现揭示了对八面体位点 Cr 3+发光的新见解，这可能会彻底改变近红外荧光粉的设计。
更新日期：2024-01-08
中文翻译：
唤醒哑地，实现超宽带近红外荧光粉
近年来，近红外（NIR）光源因其在光谱学和生物医学成像等各个领域的广泛应用而受到广泛欢迎。然而，近红外荧光粉的发射带宽有限是其发展的一个重大瓶颈。在这里，报道了一种新策略，通过唤醒哑位点来拓宽近红外荧光粉的发射带宽。合成了Na 4 M 3 Ta(PO 4 ) 6 : Cr 3+ ( M =Al 3+ , Ga 3+ , In 3+ )荧光粉，其带宽从134 nm到232 nm大大拓宽。结构和光谱分析表明NaO 6八面体位点具有严重的t 2g型畸变，使其成为Cr 3+的哑位点。通过在M位点引入较大的In 3+ ，NaO 6位点的角度畸变减小到正常范围，使得Cr 3+再次发光。随着带宽的加宽，发射峰也从 802 nm 红移至 977 nm，从而在近红外光谱应用中具有优势。有趣的是，NaO 6位点的唤醒发光表现出比原始M/TaO 6八面体位点更好的发光特性。这些发现揭示了对八面体位点 Cr 3+发光的新见解，这可能会彻底改变近红外荧光粉的设计。
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