Frontiers of Physics ( IF 6.5 ) Pub Date : 2024-01-05 , DOI: 10.1007/s11467-023-1369-0 Chaowei He , Jiantian Zhang , Li Gong , Peng Yu
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Two-dimensional (2D) ferroelectric materials, which possess electrically switchable spontaneous polarization and can be easily integrated with semiconductor technologies, is of utmost importance in the advancement of high-integration low-power nanoelectronics. Despite the experimental discovery of certain 2D ferroelectric materials such as CuInP2S6 and In2Se3, achieving stable ferroelectricity at room temperature in these materials continues to present a significant challenge. Herein, stable ferroelectric order at room temperature in the 2D limit is demonstrated in van der Waals SnP2S6 atom layers, which can be fabricated via mechanical exfoliation of bulk SnP2S6 crystals. Switchable polarization is observed in thin SnP2S6 of ∼7 nm. Importantly, a van der Waals ferroelectric field-effect transistor (Fe-FET) with ferroelectric SnP2S6 as top-gate insulator and p-type WTe0.6Se1.4 as the channel was designed and fabricated successfully, which exhibits a clear clockwise hysteresis loop in transfer characteristics, demonstrating ferroelectric properties of SnP2S6 atomic layers. In addition, a multilayer graphene/SnP2S6/multilayer graphene van der Waals vertical heterostructure phototransistor was also fabricated successfully, exhibiting improved optoelectronic performances with a responsivity (R) of 2.9 A/W and a detectivity (D) of 1.4 × 1012 Jones. Our results show that SnP2S6 is a promising 2D ferroelectric material for ferroelectric-integrated low-power 2D devices.
中文翻译:
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范德华 SnP2S6 的室温铁电性
二维(2D)铁电材料具有可电切换的自发极化,并且可以轻松与半导体技术集成,对于高集成低功率纳米电子学的发展至关重要。尽管实验发现了某些2D铁电材料,例如CuInP 2 S 6和In 2 Se 3,但在这些材料中在室温下实现稳定的铁电性仍然是一个重大挑战。在此,在范德华SnP 2 S 6原子层中证明了室温下二维极限下的稳定铁电有序,该原子层可以通过块状SnP 2 S 6晶体的机械剥离来制造。在~7 nm 的薄 SnP 2 S 6中观察到可切换的偏振。重要的是,成功设计并制造了一种以铁电 SnP 2 S 6作为顶栅绝缘体、p 型 WTe 0.6 Se 1.4作为沟道的范德华铁电场效应晶体管(Fe-FET) ,该晶体管表现出明显的顺时针磁滞传输特性中的环路,展示了 SnP 2 S 6原子层的铁电特性。此外,还成功制备了多层石墨烯/SnP 2 S 6 /多层石墨烯范德华垂直异质结构光电晶体管,其光电性能得到改善,响应度(R)为2.9 A/W,探测灵敏度(D)为1.4 × 10 12琼斯.我们的结果表明,SnP 2 S 6是一种有前途的用于铁电集成低功耗二维器件的二维铁电材料。