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Spin transport of half-metal Mn2X3 with high Curie temperature: An ideal giant magnetoresistance device from electrical and thermal drives
Frontiers of Physics ( IF 6.5 ) Pub Date : 2024-01-05 , DOI: 10.1007/s11467-023-1367-2
Bin Liu , Xiaolin Zhang , Jingxian Xiong , Xiuyang Pang , Sheng Liu , Zixin Yang , Qiang Yu , Honggen Li , Sicong Zhu , Jian Wu

Currently, magnetic storage devices are encountering the problem of achieving lightweight and high integration in mobile computing devices during the information age. As a result, there is a growing urgency for two-dimensional half-metallic materials with a high Curie temperature (TC). This study presents a theoretical investigation of the fundamental electromagnetic properties of the monolayer hexagonal lattice of Mn2X3 (X = S, Se, Te). Additionally, the potential application of Mn2X3 as magneto-resistive components is explored. All three of them fall into the category of ferromagnetic half-metals. In particular, the Monte Carlo simulations indicate that the TC of Mn2S3 reachs 381 K, noticeably greater than room temperature. These findings present notable advantages for the application of Mn2S3 in spintronic devices. Hence, a prominent spin filtering effect is apparent when employing non-equilibrium Green’s function simulations to examine the transport parameters. The resulting current magnitude is approximately 2 × 104 nA, while the peak gigantic magnetoresistance exhibits a substantial value of 8.36 × 1016 %. It is noteworthy that the device demonstrates a substantial spin Seebeck effect when the temperature differential between the electrodes is modified. In brief, Mn2X3 exhibits outstanding features as a high TC half-metal, exhibiting exceptional capabilities in electrical and thermal drives spin transport. Therefore, it holds great potential for usage in spintronics applications.



中文翻译:

高居里温度半金属Mn2X3的自旋输运:电热驱动的理想巨磁阻器件

目前,磁存储设备面临着信息时代移动计算设备轻量化和高集成度的问题。因此,开发具有高居里温度( T C )的二维半金属材料变得越来越紧迫。本研究对 Mn 2 X 3 (X = S、Se、Te)单层六方晶格的基本电磁特性进行了理论研究。此外,还探讨了Mn 2 X 3作为磁阻元件的潜在应用。它们三种都属于铁磁半金属的范畴。特别地,蒙特卡罗模拟表明Mn 2 S 3的T C达到381 K,明显高于室温。这些发现为Mn 2 S 3在自旋电子器件中的应用带来了显着的优势。因此,当采用非平衡格林函数模拟来检查输运参数时,显着的自旋过滤效应是显而易见的。产生的电流大小约为 2 × 10 4 nA,而峰值巨磁阻表现出 8.36 × 10 16 % 的实际值。值得注意的是,当改变电极之间的温差时,该器件表现出显着的自旋塞贝克效应。简而言之,Mn 2 X 3表现出作为高T C半金属的突出特性,在电和热驱动自旋输运方面表现出卓越的能力。因此,它在自旋电子学应用中具有巨大的应用潜力。

更新日期:2024-01-05
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