In this study, we introduce trimethoxy (3,3,3-trifluoropropyl)-silane (F₃-TMOS) with molecular dipole moment pointing towards the hole transport layer as the buried interface modification material, which not only optimizes energy level alignment and carrier dynamics but also relieves interface strain and reduces lattice distortion, resulting in a champion power conversion efficiency (PCE) of 14.67 %.

中文翻译：

---

电子操纵分子策略实现高效锡钙钛矿光伏

在本研究中，我们引入分子偶极矩指向空穴传输层的三甲氧基（3,3,3-三氟丙基）硅烷（F ₃ -TMOS）作为埋入界面改性材料，不仅优化了能级排列和载流子动力学，同时还减轻了界面应变并减少了晶格畸变，从而实现了 14.67% 的冠军功率转换效率 (PCE)。