光电突触忆阻器的阻变特性：沉积技术、关键性能参数和应用,ACS Applied Electronic Materials

当前位置： X-MOL 学术 › ACS Appl. Electron. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

光电突触忆阻器的阻变特性：沉积技术、关键性能参数和应用
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2023-12-29 , DOI: 10.1021/acsaelm.3c01323
Rajwali Khan _{1,

2} , Naveed Ur Rehman ₂ , Shahid Iqbal ₃ , Sherzod Abdullaev _{4,

5} , Haila M. Aldosari ₁

Affiliation

由于信息技术的快速发展，人们正在研究用于数据存储和数据驱动计算的高速且可扩展的存储设备。电阻开关随机存取存储器（RRAM）是非常流行的忆阻器类型之一，由于其简单的两端结构、低功耗和低成本制造而具有快速的编程/擦除速度和高密度。在这篇评论中，我们对智能系统中前景广阔的基于忆阻器的存储器的市场进行了研究。开关存储器件根据其I – V行为进行描述和分类，以强调物理开关机制。RRAM忆阻器的各种细丝机制，包括价态变化机制（VCM）、电化学金属化机制（ECM）和热化学机制（TCM），在各种结构中尤其突出。总结了具有不同电极材料和电阻层的电阻开关器件的性能。本研究详细回顾了用于表面改性和涂层的不同沉积技术的材料。详细讨论了两个主要领域，物理和化学气相沉积技术以及对电阻开关的影响参数。简要讨论了 RRAM 忆阻器在安全、神经形态计算和人工智能非易失性逻辑系统等各个领域的前景应用以及未来展望。

"点击查看英文标题和摘要"

Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

Due to the fast evolution of information technology, high-speed and scalable memory devices are being investigated for data storage and data-driven computation. Resistive switching random access memory (RRAM) is one of the very popular types of memristors, because of its quick program/erase speed and high density as a result of its simple two-terminal structure, low power consumption, and low cost of fabrication. In this review, the market for promising memristor-based memories for smart systems is examined. The switching memory devices are described and classified according to their I–V behavior to underline the physical switching mechanisms. The various filament mechanisms of the RRAM memristor, including the valence change mechanism (VCM), electrochemical metallization mechanism (ECM), and thermochemical mechanism (TCM), are especially highlighted in various structures. The performance of resistive switching devices with different reported electrode materials and resistive layers is summarized. This study provides a detailed review of materials of the different deposition techniques used for surface modification and coating. The two major areas of interest, physical and chemical vapor deposition techniques and the influence parameter on the resistive switching, are discussed in detail. The prospective applications of RRAM memristors to various fields such as security, neuromorphic computing, and non-volatile logic systems for artificial intelligence are addressed briefly as well as the future outlook.

更新日期：2023-12-29

点击分享查看原文

点击收藏

公开下载

阅读更多本刊新发论文本刊介绍/投稿指南