Topological Vortex Domain Engineering for High Dielectric Energy Storage Performance,Advanced Energy Materials

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Topological Vortex Domain Engineering for High Dielectric Energy Storage Performance
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2023-12-29 , DOI: 10.1002/aenm.202303409
Jin Qian ₁ , Ziyi Yu ₂ , Guanglong Ge ₁ , Hairui Bai ₁ , Jinfeng Lin ₁ , Yongqi Wei ₁ , Bo Shen ₁ , Zhengqian Fu ₂ , Jiwei Zhai ₁ , Ziming Cai ₃ , Zhenxiang Cheng ₄

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Enhancing the energy storage performance of dielectric material through the adoption of a novel domain strategy is highly desirable. In this study, Bi_0.5Na_0.5TiO₃-based thin films are fabricated with topological vortex domains (VDs) by controlling the grain size and investigated the correlation between these VDs and the macroscopic polarization response, which is crucial for the energy storage performance. The emergence of VDs, in contrast to conventional ferroelectric domains, promotes polarization reversal in dielectric materials. Additionally, in contrast to the severely reduced saturation polarization typically noted in conventional relaxor ferroelectrics (RFE), the presence of VDs in RFE leads to only a slight reduction in saturation polarization. These two advantages contribute to the superior energy storage performance of the films with VDs. This approach offers a novel and promising direction for developing dielectrics with high-energy storage capabilities.

中文翻译：

高介电储能性能的拓扑涡旋域工程

通过采用新颖的域策略来增强介电材料的能量存储性能是非常可取的。在本研究中，通过控制晶粒尺寸，制备了具有拓扑涡旋域（VD）的Bi _0.5 Na _0.5 TiO _{3基薄膜，并研究了这些VD与宏观偏振响应之间的相关性，这对于储能性能至关重要。}与传统的铁电域相比，VD 的出现促进了介电材料中的极化反转。此外，与传统弛豫铁电体 (RFE) 中典型的严重降低的饱和极化相比，RFE 中 VD 的存在仅导致饱和极化略有降低。这两个优点有助于VD薄膜具有优异的储能性能。这种方法为开发具有高能量存储能力的电介质提供了一个新颖且有前途的方向。

更新日期：2023-12-29

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