基于纳米花的 GaSe/β-Ga2O3 异质结构，用于高效自供电宽带光电探测器,Journal of Materials Chemistry C

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基于纳米花的 GaSe/β-Ga2O3 异质结构，用于高效自供电宽带光电探测器
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2023-12-29 , DOI: 10.1039/d3tc04337a
Urvashi Varshney _{1,

2} , Anuj Sharma _{1,

2} , Aditya Yadav _{1,

2} , Preeti Goswami _{1,

2} , Govind Gupta _{1,

2}

Affiliation

对导弹警报、火灾警报和天文成像应用的需求不断增长，使得氧化镓成为一种有前途的超宽带隙半导体材料。将氧化镓与合适的材料集成可以提高器件的性能参数。创新的集成方法提供了一种在不限制原子晶格失配的情况下创建异质结构的替代方法。该报告将纳米花状的 GaSe 与热退火的 β-Ga ₂ O ₃相结合，形成一种异质结构，可以在深紫外 (UV) 到可见光区域进行有效检测。所开发的异质结构表现出自供电光电探测，在深紫外光谱范围（266 nm）内具有2200 mA W ^{-1的高响应度，在可见光谱范围（625 nm）内具有1560 mA W}^-1的高响应度，而在光电导模式下，观察到最大响应率为 2.4 × 10 ⁵ mA W ⁻¹ @ 5 V，同时具有低噪声等效功率 (10 ⁻¹³ W Hz ^−1/2 ) 和非常高的外部量子效率 (10 ⁴ %)。这项研究为开发具有高响应度、自供电操作和低偏置宽带光电探测器的GaSe/β-Ga ₂ O ₃基器件提供了可能性，这些器件具有简单的架构、优异的可靠性和易于加工的未来光电器件。

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A nanoflower-like GaSe/β-Ga2O3 based heterostructure for highly efficient self-powered broadband photodetectors

The rising demand for missile warnings, fire alarms, and astronomical imaging applications makes gallium oxide a promising ultra-wide band gap semiconducting material. Integrating gallium oxide with a suitable material can enhance the performance parameters of the device. An innovative integration approach provides an alternative method for creating a heterostructure without restricting atomic lattice mismatch. This report combines nanoflower-like GaSe with thermally annealed β-Ga₂O₃, forming a heterostructure that can efficiently detect in the deep ultraviolet (UV) to the visible region. The developed heterostructure exhibits self-powered photodetection with a high responsivity of 2200 mA W⁻¹ in the deep UV spectral range (266 nm) and 1560 mA W⁻¹ in the visible spectral range (625 nm), while in the photoconductive mode, the maximum responsivity is observed to be 2.4 × 10⁵ mA W⁻¹ @ 5 V, along with low noise equivalent power (10⁻¹³ W Hz^−1/2) and very high external quantum efficiency (10⁴%). This study opens possibilities for developing GaSe/β-Ga₂O₃-based devices with high responsivity, self-powered operation, and low bias broadband photodetectors with a simple architecture, excellent reliability, and easy processing for future optoelectronic devices.

更新日期：2023-12-29

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