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Fabrication of Large-Area Metal-on-Carbon Catalytic Condensers for Programmable Catalysis
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2023-12-27 , DOI: 10.1021/acsami.3c14623 Kyung-Ryul Oh 1, 2 , Tzia Ming Onn 1, 2 , Amber Walton 2 , Michael L Odlyzko 3 , C Daniel Frisbie 1, 2 , Paul J Dauenhauer 1, 2
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2023-12-27 , DOI: 10.1021/acsami.3c14623 Kyung-Ryul Oh 1, 2 , Tzia Ming Onn 1, 2 , Amber Walton 2 , Michael L Odlyzko 3 , C Daniel Frisbie 1, 2 , Paul J Dauenhauer 1, 2
Affiliation
Catalytic condensers stabilize charge on either side of a high-k dielectric film to modulate the electronic states of a catalytic layer for the electronic control of surface reactions. Here, carbon sputtering provided for fast, large-scale fabrication of metal–carbon catalytic condensers required for industrial application. Carbon films were sputtered on HfO2 dielectric/p-type Si with different thicknesses (1, 3, 6, and 10 nm), and the enhancement of conductance and capacitance of carbon films was observed upon increasing the carbon thickness following thermal treatment at 400 °C. After Pt deposition on the carbon films, the Pt catalytic condenser exhibited a high capacitance of ∼210 nF/cm2 that was maintained at a frequency ∼1000 Hz, satisfying the requirement for a dynamic catalyst to implement catalytic resonance. Temperature-programmed desorption of carbon monoxide yielded CO desorption peaks that shifted in temperature with the varying potential applied to the condenser (−6 or +6 V), indicating a shift in the binding energy of carbon monoxide on the Pt condenser surface. A substantial increase in capacitance (∼2000 nF/cm2) of the Pt-on-carbon devices was observed at elevated temperatures of 400 °C that can modulate ∼10% of charge per metal atom when 10 V potential was applied. A large catalytic condenser of 42 cm2 area Pt/C/HfO2/Si exhibited a high capacitance of 9393 nF with a low leakage current/capacitive current ratio (<0.1), demonstrating the practicality and versatility of the facile, large-scale fabrication method for metal–carbon catalytic condensers.
中文翻译:
用于可编程催化的大面积金属碳催化冷凝器的制造
催化电容器稳定高k介电膜两侧的电荷,以调节催化层的电子状态,从而对表面反应进行电子控制。在这里,碳溅射提供了工业应用所需的金属碳催化冷凝器的快速、大规模制造。在HfO 2电介质/p型Si上溅射不同厚度(1、3、6和10 nm)的碳膜,在400℃热处理后,随着碳厚度的增加,观察到碳膜电导和电容的增强。 °C。在碳膜上沉积Pt后,Pt催化电容器表现出~210 nF/cm 2的高电容,并保持在~1000 Hz的频率下,满足动态催化剂实现催化共振的要求。一氧化碳的程序升温解吸产生了 CO 解吸峰,该峰随着施加到冷凝器的不同电位(-6 或 +6 V)而发生温度变化,表明一氧化碳在 Pt 冷凝器表面上的结合能发生变化。在 400 °C 的高温下观察到碳载 Pt 器件的电容大幅增加 (~2000 nF/cm 2 ),当施加 10 V 电势时,可以调节每个金属原子的~10% 的电荷。面积为 42 cm 2的 Pt/C/HfO 2 /Si 大型催化电容器表现出 9393 nF 的高电容和低漏电流/电容电流比 (<0.1),证明了该简便、大规模的实用性和多功能性。金属-碳催化冷凝器的制造方法
更新日期:2023-12-27
中文翻译:
用于可编程催化的大面积金属碳催化冷凝器的制造
催化电容器稳定高k介电膜两侧的电荷,以调节催化层的电子状态,从而对表面反应进行电子控制。在这里,碳溅射提供了工业应用所需的金属碳催化冷凝器的快速、大规模制造。在HfO 2电介质/p型Si上溅射不同厚度(1、3、6和10 nm)的碳膜,在400℃热处理后,随着碳厚度的增加,观察到碳膜电导和电容的增强。 °C。在碳膜上沉积Pt后,Pt催化电容器表现出~210 nF/cm 2的高电容,并保持在~1000 Hz的频率下,满足动态催化剂实现催化共振的要求。一氧化碳的程序升温解吸产生了 CO 解吸峰,该峰随着施加到冷凝器的不同电位(-6 或 +6 V)而发生温度变化,表明一氧化碳在 Pt 冷凝器表面上的结合能发生变化。在 400 °C 的高温下观察到碳载 Pt 器件的电容大幅增加 (~2000 nF/cm 2 ),当施加 10 V 电势时,可以调节每个金属原子的~10% 的电荷。面积为 42 cm 2的 Pt/C/HfO 2 /Si 大型催化电容器表现出 9393 nF 的高电容和低漏电流/电容电流比 (<0.1),证明了该简便、大规模的实用性和多功能性。金属-碳催化冷凝器的制造方法