The ternary 0.39Bi(Ni_1/2Ti_1/2)O₃–0.20PbZrO₃–0.41PbTiO₃:x(Bi₂O₃/PbO) [x = 0, 1, and 2 wt%] ceramics were synthesized via solid-state sintering technique. The impact of excess addition on structural and electrical properties was investigated. PXRD results confirmed the diffusion of excess addition in the 0.39Bi(Ni_1/2Ti_1/2)O₃–0.20PbZrO₃–0.41PbTiO₃ (BNPZT) lattice, exhibiting the perovskite structure with major rhombohedral (R3c) and minor tetragonal (P4mm) phases. The microstructure of the samples exhibits average grain size distribution (<8 μm). The temperature and frequency-dependent dielectric measurement revealed the relaxor-like ferroelectric behaviour and curie temperature (T_c ∼290 °C) observed in BNPZT:1 Pb ceramics. The improved remnant polarization (P_r∼23.47 μC/cm²) and coercive field (E_c ∼16.13 kV/cm) were obtained in BNPZT:2 Pb ceramics. The enhanced piezoelectric charge coefficient (d₃₃ ∼ 496 pC/N) and maximum strain (S_max ∼0.12 %) were obtained for BNPZT. The least asymmetric factor (γ_s) illustrates the lower concentration of inherent defects in BNPZT:1(Bi/Pb) ceramics. This study provides insight into microstructural and electrical properties tuning and paves the way for designing piezoelectric materials.

三元 0.39Bi(Ni _1/2 Ti _1/2 )O ₃ –0.20PbZrO ₃ –0.41PbTiO ₃ :x(Bi ₂ O ₃ /PbO) [x = 0、1 和 2 wt%] 陶瓷通过固态烧结技术。研究了过量添加对结构和电性能的影响。PXRD结果证实了过量添加物在0.39Bi(Ni _1/2 Ti _1/2 )O ₃ –0.20PbZrO ₃ –0.41PbTiO _{3 (BNPZT)晶格中的扩散，呈现出主要菱面体(} R3c )和次要四方晶格的钙钛矿结构（P4mm ）阶段。样品的微观结构表现出平均晶粒尺寸分布（<8μm）。温度和频率相关的介电测量揭示了在 BNPZT:1 Pb 陶瓷中观察到的类弛豫铁电行为和居里温度 ( T _c ∼290 °C )。BNPZT:2 Pb 陶瓷获得了改善的剩余极化（P _r ∼ 23.47 μC/cm ² ）和矫顽场（E _c ∼16. 13 kV/cm）。BNPZT 获得了增强的压电电荷系数（d ₃₃ ∼ 496 pC/N）和最大应变（S _max ∼0.12 % ）。最小不对称因子 ( γ _s ) 说明 BNPZT:1(Bi/Pb) 陶瓷中固有缺陷的浓度较低。这项研究提供了对微观结构和电性能调节的见解，并为设计压电材料铺平了道路。