Heteroepitaxial Growth of Black Phosphorus on Tin Monosulfide,Nano Letters

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Heteroepitaxial Growth of Black Phosphorus on Tin Monosulfide
Nano Letters ( IF 9.6 ) Pub Date : 2023-12-26 , DOI: 10.1021/acs.nanolett.3c04372
Youhuan Zhu _{1,

2} , Junjie Cao _{1,

2} , Shanshan Liu ₂ , Kian Ping Loh _{1,

2}

Affiliation

Black phosphorus (Black P), a layered semiconductor with a layer-dependent bandgap and high carrier mobility, is a promising candidate for next-generation electronics and optoelectronics. However, the synthesis of large-area, layer-precise, single crystalline Black P films remains a challenge due to their high nucleation energy. Here, we report the molecular beam heteroepitaxy of single crystalline Black P films on a tin monosulfide (SnS) buffer layer grown on Au(100). The layer-by-layer growth mode enables the preparation of monolayer to trilayer films, with band gaps that reflect layer-dependent quantum confinement.

中文翻译：

一硫化锡上黑磷的异质外延生长

黑磷（Black P）是一种具有层相关带隙和高载流子迁移率的层状半导体，是下一代电子学和光电子学的有前途的候选材料。然而，由于其高成核能，大面积、层精确、单晶 Black P 薄膜的合成仍然是一个挑战。在这里，我们报道了在 Au(100) 上生长的一硫化锡 (SnS) 缓冲层上单晶 Black P 薄膜的分子束异质外延。逐层生长模式能够制备单层到三层薄膜，其带隙反映了层相关的量子限制。

更新日期：2023-12-26

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