Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors,ACS Photonics

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Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors
ACS Photonics ( IF 6.5 ) Pub Date : 2023-12-20 , DOI: 10.1021/acsphotonics.3c01261
Haodong Wang _{1,

2} , Meixin Feng _{1,

2,

3} , Yaozong Zhong _{1,

2,

3} , Xin Chen _{1,

2,

3} , Hongwei Gao _{1,

2,

3} , Ercan Yilmaz ₄ , Qian Sun _{1,

2,

3} , Hui Yang _{1,

2,

3}

Affiliation

In this work, high-performance ultraviolet (UV) photodetectors (PDs) based on an AlGaN/GaN double-channel high-electron-mobility transistor (HEMT) were fabricated and investigated using 360 nm illumination. The design of the novel device structure introduces double two-dimensional electron gas channels, which remarkably improve the effectiveness in the collection of photogenerated carriers and make it work as a two-terminal normally off device. The device exhibited a high responsivity of 2.1 × 10⁷ A/W and a high specific detectivity of 1.7 × 10¹⁵ Jones under the illumination of 9.7 μW/cm², indicating the excellent capability of detecting an ultraweak signal. Meanwhile, a distinguished transient performance was also observed when it operated under 500 Hz pulse illumination. Combining fabrication conciseness and outstanding performance advantages, the proposed AlGaN/GaN double-channel HEMT UV PD shows promising potential in the development of next-generation UV PDs.

中文翻译：

基于 AlGaN/GaN 双通道高电子迁移率晶体管的超高响应度紫外光电探测器

在这项工作中，使用 360 nm 照明制造并研究了基于 AlGaN/GaN 双通道高电子迁移率晶体管 (HEMT) 的高性能紫外 (UV) 光电探测器 (PD)。该新型器件结构的设计引入了双二维电子气通道，显着提高了光生载流子的收集效率，使其成为两端常关器件。^{该器件在9.7 μW/cm 2 的}照度下表现出2.1 × 10 ⁷ A/W的高响应度和1.7 × 10 ¹⁵ Jones的高比探测率，表现出优异的超微弱信号检测能力。同时，当它在 500 Hz 脉冲照明下工作时，也观察到了出色的瞬态性能。所提出的AlGaN/GaN双通道HEMT UV PD结合了制造简洁性和突出的性能优势，在下一代UV PD的开发中显示出广阔的潜力。

更新日期：2023-12-20

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