Enhanced LED Performance by Ion Migration in Multiple Quantum Well Perovskite,The Journal of Physical Chemistry Letters

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Enhanced LED Performance by Ion Migration in Multiple Quantum Well Perovskite
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2023-12-15 , DOI: 10.1021/acs.jpclett.3c02822
Shir Yudco ₁ , Juan Bisquert ₂ , Lioz Etgar ₁

Affiliation

Here we study the effect of ion migration on the performance of perovskite light emitting diodes (PeLEDs). We compared aromatic and linear barrier molecules in Ruddlesden-Popper and Dion-Jacobson two-dimensional perovskites having multiple quantum well (MQW) structures. PeLED devices were fabricated by using the same conditions and architecture, while their electroluminescence properties and ion migration behavior were investigated. Impedance spectroscopy measurements were used to analyze the PeLEDs, which found a direct link between the barrier molecule type, the device efficiency, and ion migration. The best performing LEDs were based on the aromatic barriers, which present dominant inductive impedance, indicating an earlier onset voltage of radiative recombination. These findings present an approach of how to control radiative emission in perovskite LEDs which opens the way for further improvement in PeLEDs and memristors.

中文翻译：

通过多量子阱钙钛矿中的离子迁移增强 LED 性能

在这里，我们研究离子迁移对钙钛矿发光二极管（PeLED）性能的影响。我们比较了具有多量子阱 (MQW) 结构的 Ruddlesden-Popper 和 Dion-Jacobson 二维钙钛矿中的芳香族和线性势垒分子。使用相同的条件和架构制造了 PeLED 器件，同时研究了它们的电致发光特性和离子迁移行为。使用阻抗光谱测量来分析 PeLED，发现势垒分子类型、器件效率和离子迁移之间存在直接联系。性能最好的 LED 基于芳香屏障，其呈现出主导的电感阻抗，表明辐射复合的起始电压较早。这些发现提出了一种控制钙钛矿 LED 辐射发射的方法，为进一步改进 PeLED 和忆阻器开辟了道路。

更新日期：2023-12-15

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