Bi₂O₃ semiconductors with excellent optical and electrical properties can be used in photodetectors (PDs). For different phase structures of Bi₂O₃ with corresponding optoelectronic properties in Bi₂O₃ due to differences in crystal structure and energy band structure, it is important to control the phase structure to obtain high-performance Bi₂O₃-based PDs. Herein, Bi₂O₃ nanosheet films with α and β phase structures controlled by the annealing temperature are deposited on the surface of TiO₂ nanorod arrays (NRs) to construct ultraviolet (UV)-blue self-powered PDs. The effects of the energy band structure, Fermi level and carrier mobility of Bi₂O₃ films with different phase structures on the performance of Bi₂O₃/TiO₂ PDs are investigated by combining theoretical calculations and experimental. The β-Bi₂O₃/TiO₂ PDs with strong built-in electric field, large carrier mobility, small interfacial transfer resistance and long carrier lifetime exhibit excellent photoresponse characteristics. The PD demonstrates a responsivity of 26.7 mA W⁻¹ and detectivity of 5.93 × 10¹¹ Jones under 365 nm illumination. In addition, the imaging application of β-Bi₂O₃/TiO₂ PD is explored by extending the photocurrent mapping values of a single PD unit to a complex array of optical information image processing in complex environments utilizing the UV-blue dual-band self-powered photoresponse properties of the PDs.

Bi ₂ O ₃ 半导体具有优异的光学和电学性能，可用于光电探测器（PD）。对于Bi ₂ O ₃ 的不同相结构，由于晶体结构和能量的差异，Bi ₂ O ₃ 具有相应的光电特性由于能带结构的不同，控制相结构对于获得高性能 Bi ₂ O ₃ 基 PD 非常重要。在此，通过退火温度控制，在 TiO ₂ 纳米棒阵列（NR）表面沉积具有 α 和 β 相结构的 Bi ₂ O ₃ 纳米片薄膜。构建紫外（UV）蓝光自供电PD。不同相结构Bi ₂ O ₃ 薄膜的能带结构、费米能级和载流子迁移率对Bi ₂ O /TiO ₂ 通过理论计算和实验相结合的方式研究PD。 β-Bi ₂ O ₃ /TiO ₂ PD 具有强内建电场、大载流子迁移率、小界面传输电阻和长载流子寿命优异的光响应特性。 PD 在 365 nm 照明下表现出 26.7 mA W ⁻¹ 的响应度和 5.93 × 10 ¹¹ Jones 的探测度。此外，通过将单个PD单元的光电流映射值扩展到利用 PD 的紫外-蓝色双波段自供电光响应特性，在复杂环境中进行复杂的光学信息图像处理阵列。