Bismuth antimony telluride (BiSbTe) is commonly used for thermoelectric generation at temperatures near ambient temperature. Here, we report incorporating reduced graphene oxide (rGO) and CuSeTe into theBiSbTe (BST) (rGO/BiSbTe-CuSeTe, where = 0.0%, 0.1%, 0.3%, 0.5% and 1.0%, in mass) synthesized by a solid-state technique. The dispersion of rGO and CuSeTe into the BST matrix improved carrier transport properties at the grain boundary interfaces and reduced thermal conductivity. Strong electron scattering at large interface barriers was responsible for increased electrical conductivity. The bulk sample of rGO/BST-0.3% CuSeTe (in mass) possessed a low thermal conductivity of 0.76 W·m·K at 497 K. Enhanced phonon scattering at grain boundaries between BST and rGO/CuSeTe caused a low thermal conductivity. At 448 K, the highest value for rGO/BST-0.3%CuSeTe (in mass) was 1.64, which is 37% higher than the value for pure BST ( = 1.19). Results suggested that incorporating rGO and CuSeTe into the BST matrix effectively improved thermoelectric power generation.

中文翻译：

---

通过散射工程策略实现rGO/Bi0.5Sb1.5Te3/Cu2Se1–xTex复合材料的热电性能


碲化铋锑 (BiSbTe) 通常用于在接近环境温度的温度下进行热电发电。在这里，我们报告将还原氧化石墨烯 (rGO) 和 CuSeTe 掺入由固体合成的 BiSbTe (BST) (rGO/BiSbTe-CuSeTe，其中 = 0.0%、0.1%、0.3%、0.5% 和 1.0%，以质量计)。状态技术。 rGO 和 CuSeTe 分散到 BST 基体中改善了晶界界面处的载流子传输性能并降低了热导率。大界面势垒处的强电子散射导致电导率增加。 rGO/BST-0.3% CuSeTe（质量）的块状样品在 497 K 时具有 0.76 W·m·K 的低热导率。BST 和 rGO/CuSeTe 之间晶界处增强的声子散射导致低热导率。在 448 K 时，rGO/BST-0.3%CuSeTe（质量）的最高值为 1.64，比纯 BST 的值 (= 1.19) 高 37%。结果表明，将 rGO 和 CuSeTe 纳入 BST 基体中可以有效改善热电发电。